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Open AccessJournal ArticleDOI

Instabilities in crystal growth by atomic or molecular beams

TLDR
In this paper, a review of the most frequent instabilities in ballistic growth is presented, which are mostly kinetic (when the desired state cannot be reached because of a lack of time) or thermodynamic (when a desired state is unstable).
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This article is published in Physics Reports.The article was published on 2000-02-01 and is currently open access. It has received 235 citations till now.

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Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds

TL;DR: In this paper, the authors describe submonolayer nucleation and growth of two-dimensional islands during deposition and show that the traditional mean-field treatment is quite successful in capturing the behavior of mean island densities, but it fails to predict island size distributions.
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Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering

TL;DR: A review of different mechanisms that have been proposed and how they fit together in terms of the kinetic regimes in which they dominate is provided in this paper, with a comparison between theory and experiment is used to highlight strengths and weaknesses in their understanding.
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Self-organization of nanostructures in semiconductor heteroepitaxy

TL;DR: In this article, the authors analyzed the driving forces of self-organization mechanisms in semiconductor heteroepitaxy and showed that under certain conditions, these mechanisms and their interplay result in self-organized nanostructure arrays with a high degree of uniformity.
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Crystal surfaces in and out of equilibrium: A modern view

TL;DR: In this article, a review of the last two decades of progress in the theory of crystal surfaces in and out of equilibrium is reviewed, focusing on step meandering and bunching, which are two main forms of instabilities encountered on vicinal surfaces.
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Growth and self-organization of SiGe nanostructures

TL;DR: In this article, the authors present a review of theoretical concepts and experimental results on the spontaneous formation and self-organization of SiGe quantum dots on silicon substrates, including morphological, structural and compositional properties.
References
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Journal ArticleDOI

A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its path

TL;DR: In this article, a general definition of the driving force for threading dislocation in a nonuniform stress field is adopted to calculate the driving forces on the dislocation due to an encounter with an interface misfit dislocation on an intersecting glide plane.
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Scaling of diffusion-mediated island growth in iron-on-iron homoepitaxy.

TL;DR: An analysis of the island size and separation distributions of Fe islands, observed in the initial stages of growth in the homoepitaxy of Fe on Fe(001) whiskers, shows scaling properties recently predicted in nucleation and growth theories.
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Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)

TL;DR: In this paper, the authors used plan-view and cross-sectional transmission electron microscopy to obtain cluster size distribution and demarcation between size regime for coherent versus incoherent islands.
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In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001)

TL;DR: In this paper, the size evolution of molecular beam epitaxy-grown strained InAs 3D islands on GaAs(001) was examined using in situ ultrahigh vacuum atomic force microscopy.
Book

Surface diffusion : atomistic and collective processes

TL;DR: In this paper, Gomer et al. proposed a density-functional theory of surface diffusion and Epitaxy, and showed that the density function can be used to model the dynamics of surface dynamics.