Instabilities in crystal growth by atomic or molecular beams
TLDR
In this paper, a review of the most frequent instabilities in ballistic growth is presented, which are mostly kinetic (when the desired state cannot be reached because of a lack of time) or thermodynamic (when a desired state is unstable).About:
This article is published in Physics Reports.The article was published on 2000-02-01 and is currently open access. It has received 235 citations till now.read more
Citations
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Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
TL;DR: In this paper, the authors describe submonolayer nucleation and growth of two-dimensional islands during deposition and show that the traditional mean-field treatment is quite successful in capturing the behavior of mean island densities, but it fails to predict island size distributions.
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Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering
Wai-Lun Chan,Eric Chason +1 more
TL;DR: A review of different mechanisms that have been proposed and how they fit together in terms of the kinetic regimes in which they dominate is provided in this paper, with a comparison between theory and experiment is used to highlight strengths and weaknesses in their understanding.
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Self-organization of nanostructures in semiconductor heteroepitaxy
TL;DR: In this article, the authors analyzed the driving forces of self-organization mechanisms in semiconductor heteroepitaxy and showed that under certain conditions, these mechanisms and their interplay result in self-organized nanostructure arrays with a high degree of uniformity.
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Crystal surfaces in and out of equilibrium: A modern view
TL;DR: In this article, a review of the last two decades of progress in the theory of crystal surfaces in and out of equilibrium is reviewed, focusing on step meandering and bunching, which are two main forms of instabilities encountered on vicinal surfaces.
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Growth and self-organization of SiGe nanostructures
TL;DR: In this article, the authors present a review of theoretical concepts and experimental results on the spontaneous formation and self-organization of SiGe quantum dots on silicon substrates, including morphological, structural and compositional properties.
References
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Evolution of Mound Morphology in Reversible Homoepitaxy on Cu(100)
J.-K. Zuo,J. F. Wendelken +1 more
TL;DR: The interpretation for the evolution of the SPA-LEED profile from a ring structure to a single time-invariant peak is clarified and it is suggested that this results from a downhill current driven by step edge line tension in balance with an uphill current due to the Schwoebel barrier effect.
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Growth and properties of Si/SiGe superlattices
TL;DR: In this article, a two-dimensional Si/SiGe superlattices were grown on Si substrates by molecular beam epitaxy (MBE) using Sb spikes using the method of doping by secondary implantation (DSI).
Journal Article
Instability of the separation boundary between a nonhydrostatically stressed elastic body and a melt
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Growth and Erosion of Thin Solid Films
G. Steven Bales,Robijn Bruinsma,Elliott A. Eklund,R. P. U. Karunasiri,Joseph Rudnick,Andrew Zangwill +5 more
TL;DR: For amorphous thin films, the shadow instability can be described by a remarkably simple model, which can be shown to reproduce many important observed characteristics of thin film morphology.
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Diffusion on strained surfaces
TL;DR: In this paper, the change of diffusion kinetics when elastic fields are present is discussed for diffusion on (001) surfaces of simple cubic, fcc and bcc lattices.