Instabilities in crystal growth by atomic or molecular beams
TLDR
In this paper, a review of the most frequent instabilities in ballistic growth is presented, which are mostly kinetic (when the desired state cannot be reached because of a lack of time) or thermodynamic (when a desired state is unstable).About:
This article is published in Physics Reports.The article was published on 2000-02-01 and is currently open access. It has received 235 citations till now.read more
Citations
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Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
TL;DR: In this paper, the authors describe submonolayer nucleation and growth of two-dimensional islands during deposition and show that the traditional mean-field treatment is quite successful in capturing the behavior of mean island densities, but it fails to predict island size distributions.
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Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering
Wai-Lun Chan,Eric Chason +1 more
TL;DR: A review of different mechanisms that have been proposed and how they fit together in terms of the kinetic regimes in which they dominate is provided in this paper, with a comparison between theory and experiment is used to highlight strengths and weaknesses in their understanding.
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Self-organization of nanostructures in semiconductor heteroepitaxy
TL;DR: In this article, the authors analyzed the driving forces of self-organization mechanisms in semiconductor heteroepitaxy and showed that under certain conditions, these mechanisms and their interplay result in self-organized nanostructure arrays with a high degree of uniformity.
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Crystal surfaces in and out of equilibrium: A modern view
TL;DR: In this article, a review of the last two decades of progress in the theory of crystal surfaces in and out of equilibrium is reviewed, focusing on step meandering and bunching, which are two main forms of instabilities encountered on vicinal surfaces.
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Growth and self-organization of SiGe nanostructures
TL;DR: In this article, the authors present a review of theoretical concepts and experimental results on the spontaneous formation and self-organization of SiGe quantum dots on silicon substrates, including morphological, structural and compositional properties.
References
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Step Motion on Crystal Surfaces. II
TL;DR: In this article, it is shown that coalescence of steps or stabilization of step spacings can occur as a consequence of assuming that capture probabilities are directionally dependent, and a general solution for the time-dependent step distribution is obtained in terms of these probabilities and an arbitrary initial distribution of an infinite sequence of parallel steps.
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Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001).
TL;DR: The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscope and a metastable 3D cluster phase with well-defined structure and shape is found.
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One-dimensional dislocations. I. Static theory
TL;DR: In this article, the theory of a one-dimensional dislocation model is developed, and critical conditions for spontaneous generation (or escape) of dislocations are determined, and also the activation energies for such processes below the critical limits.
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Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs.
TL;DR: Through the reduction of the number of emitting dots in small mesa structures, it is shown narrow lines in the spectra, each associated with a single InAs dot, indicate short capture and relaxation times into the dots.
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Surfactants in epitaxial growth.
TL;DR: In this article, the role of surface active species (surfactants) in heteroepitaxial growth was investigated and the use of a segregating surfactant was proposed to reduce the surface free energies of A and B and suppress island formation, as demonstrated in the growth of Si/Ge/Si(001) with a monolayer of As.