Instabilities in crystal growth by atomic or molecular beams
TLDR
In this paper, a review of the most frequent instabilities in ballistic growth is presented, which are mostly kinetic (when the desired state cannot be reached because of a lack of time) or thermodynamic (when a desired state is unstable).About:
This article is published in Physics Reports.The article was published on 2000-02-01 and is currently open access. It has received 235 citations till now.read more
Citations
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Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
TL;DR: In this paper, the authors describe submonolayer nucleation and growth of two-dimensional islands during deposition and show that the traditional mean-field treatment is quite successful in capturing the behavior of mean island densities, but it fails to predict island size distributions.
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Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering
Wai-Lun Chan,Eric Chason +1 more
TL;DR: A review of different mechanisms that have been proposed and how they fit together in terms of the kinetic regimes in which they dominate is provided in this paper, with a comparison between theory and experiment is used to highlight strengths and weaknesses in their understanding.
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Self-organization of nanostructures in semiconductor heteroepitaxy
TL;DR: In this article, the authors analyzed the driving forces of self-organization mechanisms in semiconductor heteroepitaxy and showed that under certain conditions, these mechanisms and their interplay result in self-organized nanostructure arrays with a high degree of uniformity.
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Crystal surfaces in and out of equilibrium: A modern view
TL;DR: In this article, a review of the last two decades of progress in the theory of crystal surfaces in and out of equilibrium is reviewed, focusing on step meandering and bunching, which are two main forms of instabilities encountered on vicinal surfaces.
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Growth and self-organization of SiGe nanostructures
TL;DR: In this article, the authors present a review of theoretical concepts and experimental results on the spontaneous formation and self-organization of SiGe quantum dots on silicon substrates, including morphological, structural and compositional properties.
References
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Reexchange Controlled Diffusion in Surfactant-Mediated Epitaxial Growth: Si on As-Terminated Si(111)
TL;DR: In this article, the activation energies for surface diffusion and exchange are similar in size and much smaller than the activation energy for the reexchange ( ${E}_{\mathrm{REEX}}$) process.
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Different Regimes in the Ehrlich-Schwoebel Instability
TL;DR: In this paper, a one-dimensional high-symmetry growing surface in presence of step-edge barriers is studied numerically and analytically, through a discrete/continuous model which neglects thermal detachment from steps.
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High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -
TL;DR: In this article, self-assembled InAs quantum dots emitting at 1.5 -with high efficiency have been grown by GSMBE on InP. One of the most important properties of quantum dots is the conservation of high radiative recombination efficiency at room temperature as opposed to the case of quantum wells.
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Two-dimensional islanding atop stressed solid helium and epitaxial films.
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Out-of-equilibrium step meandering on a vicinal surface.
TL;DR: A theory of step meandering on a vicinal surface is developed and general nonlinear equations for interacting “lines” are derived, where ordered structures seem to prevail.