Journal ArticleDOI
Lattice distortion energy spectra of as-grown bismuth thin films and their thickness dependence
V. Damodara Das,N. Jayaprakash +1 more
TLDR
In this paper, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated and it is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev.Abstract:
Bismuth thin films of various thicknesses between 15 nm and 350 nm were vacuum deposited at room temperature on to glass substrates, immediately after which they were twice heat treated at a uniform rate. During the heat treatment, the resistance changes were monitored and, using these data, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated. It is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev. It is also found that ∫F0 (E) dE oscillates with thickness, which is attributed to the quantum size effect.read more
Citations
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Journal ArticleDOI
Size-dependent structural characteristics of thin bismuth films
TL;DR: In this article, Bismuth thin films in the thickness range from 10 to 200 nm were deposited on glass substrates by thermal evaporation and investigated by electron microscopy and X-ray diffraction.
Journal ArticleDOI
Size and temperature dependence of thermoelectric power and electrical resistivity of vacuum-deposited antimony thin films
TL;DR: In this paper, the thermoelectric power and electrical conductivity data were combined and simultaneously analyzed using the effective mean free path theory of size effect in thin antimony films developed by Tellier and Pichard et al.
Proceedings ArticleDOI
A Preliminary Study of Contamination Effects in a Bismuth Hall Thruster Environment
Mark W. Crofton,Kevin D. Diamant +1 more
TL;DR: The properties of bismuth have been studied, motivated by potential spacecraft contamination effects of Bismuth Hall thrusters as mentioned in this paper, and an extensive literature survey was conducted to obtain electrical, thermal, sputtering, and optical characteristics, as well as morphology and quantum size effects of thin films.
Journal ArticleDOI
Semiconducting behaviour of thin bismuth films vacuum-deposited at different substrate temperatures
V. Damodara Das,S. Vaidehi +1 more
TL;DR: In this article, thin bismuth films were vacuum-deposited onto glass substrates at different substrate temperatures in a vacuum of 2×10−5 torr, and the resistance of the films has been measured as a function of temperature in situ during and after annealing.
References
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Journal ArticleDOI
Anomalous variation of resistance in bismuth thin films and the effect of substrate temperature
V. Damodara Das,N. Jayaprakash +1 more
TL;DR: In this paper, the resistance of bismuth thin films of thickness 720 A have been vacuum deposited at various substrate temperatures on glass substrates and their resistances are recorded as a function of temperature after annealing the films at 200°C.
Journal ArticleDOI
The Role of Defects in the Quantum Size Effect
TL;DR: In this paper, the influence of defects in thin semimetal films on the electrical conductivity is explored by extending the work of Sandomirskiǐ to include a scattering potential of finite range.
Journal ArticleDOI
Lattice distortion energy of heat-treated manganese films
L. Olumekor,J. Beynon +1 more
Journal ArticleDOI
Oscillatory behaviour of resistivity with thickness in bismuth thin films
V. Damodara Das,N. Jayaprakash +1 more
TL;DR: In this article, it was shown that resistivity oscillates with thickness both for unannealed and annealed films and that the same kind of oscillatory behaviour with thickness is also observed in the case of defect resistivity.
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