Journal ArticleDOI
Lightweight flexible indium-free oxide TFTs with AND logic function employing chitosan biopolymer as self-supporting layer
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TLDR
In this paper, lightweight flexible aluminum-zinc-oxide (AZO) thin-film transistors are fabricated using chitosan biopolymer as self-supporting layer.Abstract:
Chitosan, a natural polysaccharide, is nontoxic, lightweight and biodegradable, which exhibits a great potential for the emerging flexible and “green” electronic applications. Here, lightweight flexible aluminum-zinc-oxide (AZO) thin-film transistors (TFTs) are fabricated using chitosan biopolymer as self-supporting layer. This kind of biopolymer electrolyte can provide a strong electric-double-layer effect, which leads to a large capacitance with lower energy consumption. With the low-cost indium-free AZO deposited onto the chitosan film as the coplanar gate and source/channel/drain electrodes, the transistor shows a moderate on/off ratio of ∼104, a relatively ideal field-effect mobility of 0.3 cm2/Vs and a moderate sub-threshold swing of 0.65 V/dec. Moreover, logic “AND” function is realized in the flexible device with two coplanar gates as the input terminals. Such chitosan-gated flexible TFT devices can provide promising candidates for the next generation wearable and “green” electronics.read more
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Journal ArticleDOI
A Sub-10 nm Vertical Organic/Inorganic Hybrid Transistor for Pain-Perceptual and Sensitization-Regulated Nociceptor Emulation.
Guangdi Feng,Jie Jiang,Yuhang Zhao,Shitan Wang,Biao Liu,Kai Yin,Dongmei Niu,Xiaohui Li,Yiqin Chen,Huigao Duan,Junliang Yang,Jun He,Yongli Gao,Yongli Gao,Qing Wan +14 more
TL;DR: A sub‐10 nm indium‐tin‐oxide transistor with an ultrashort vertical channel as low as ≈3 nm, using sodium alginate bio‐polymer electrolyte as gate dielectric, is demonstrated and can emulate important characteristics of PPN such as pain threshold, memory of prior injury, and pain sensitization/desensitization.
Journal ArticleDOI
Recent Progress in Artificial Synapses Based on Two-Dimensional van der Waals Materials for Brain-Inspired Computing
TL;DR: On the basis of recent research, brain-inspired parallel computing is considered as one of the most promising technologies for efficiently handling large amounts of informational data.
Journal ArticleDOI
Vertical 0D-Perovskite/2D-MoS2 van der Waals Heterojunction Phototransistor for Emulating Photoelectric-Synergistically Classical Pavlovian Conditioning and Neural Coding Dynamics
Yongchao Cheng,Huangjinwei Li,Biao Liu,Leyong Jiang,Min Liu,Han Huang,Junliang Yang,Jun He,Jie Jiang +8 more
TL;DR: A novel neuromorphic-photoelectric device of vertical van der Waals heterojunction phototransistors based on a colloidal 0D-CsPbBr3 -quantum-dots/2D-MoS2 heteroj junction channel is proposed using a polymer ion gel electrolyte as the gate dielectric and the results suggest that the proposed device has potential for applications associated with next-generation brain-like photoelectronic human-computer interactions and cognitive systems.
Journal ArticleDOI
Photoelectric Visual Adaptation Based on 0D‐CsPbBr 3 ‐Quantum‐Dots/2D‐MoS 2 Mixed‐Dimensional Heterojunction Transistor
TL;DR: The key characteristics of biological adaptation, such as accuracy, sensitivity, inactivation, and desensitization behaviors, are successfully emulated in the device based on the unique trapping‐detrapping mechanism.
Journal ArticleDOI
Research progress on hybrid organic–inorganic perovskites for photo-applications
TL;DR: In this paper, the challenges and outlook for the hybrid organic-inorganic perovskite-based photodetectors, light-emitting diodes, solar cells and photocatalysts are considered.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Electrolyte-gated transistors for organic and printed electronics
Se Hyun Kim,Kihyon Hong,Wei Xie,Keun Hyung Lee,Sipei Zhang,Timothy P. Lodge,C. Daniel Frisbie +6 more
TL;DR: Recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics is summarized and key developments in electrolyte materials for use in printed electronics are reviewed.
Journal ArticleDOI
Organic Thin‐Film Transistors Fabricated on Resorbable Biomaterial Substrates
TL;DR: It is demonstrated that organic thin film transistor using a small molecule semiconductor in combination with a biodegradable polymeric substrate and dielectric perform stably after exposure to water and are resorbable in an in vitro degradation environment.
Journal ArticleDOI
Structure–process–property relationship of the polar graphene oxide-mediated cellular response and stimulated growth of osteoblasts on hybrid chitosan network structure nanocomposite scaffolds
TL;DR: The seeded cells were able to infiltrate inside the pores of chitosan-graphene oxide scaffolds, suggesting that the incorporation of polar graphene oxide in scaffolds is promising for bone tissue engineering.
Journal ArticleDOI
Freestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes
TL;DR: Freestanding synaptic transistors are fabricated on solution-processed chitosan membranes and spiking logic operation and logic modulation are realized.