scispace - formally typeset
Journal ArticleDOI

Liquid-gated interface superconductivity on an atomically flat film

Reads0
Chats0
TLDR
The present result reveals that the EDLT is an extremely versatile tool to induce electronic phase transitions by electrostatic charge accumulation and provides new routes in the search for superconductors beyond those synthesized by traditional chemical methods.
Abstract
Using a liquid gate has allowed electrically induced superconductivity in a solid specimen by means of carrier accumulation on the surface. But this phenomenon was limited to materials that became superconductors at low carrier density. It is now shown that superconductivity can be induced in a much wider range of materials by using an ionic liquid.

read more

Citations
More filters
Journal ArticleDOI

Emergent phenomena at oxide interfaces

TL;DR: Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces, with characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale.
Journal ArticleDOI

Ionic Liquids at Electrified Interfaces

TL;DR: One of the advantages of RTILs as compared to their high-temperature molten salt (HTMS) “sister-systems” is that the dissolved molecules are not imbedded in a harsh high temperature environment which could be destructive for many classes of fragile (organic) molecules.
Journal ArticleDOI

Superconducting Dome in a Gate-Tuned Band Insulator

TL;DR: A large enhancement in the transition temperature Tc occurring at optimal doping in the chemically inaccessible low–carrier density regime is revealed, indicating that the superconducting dome may arise even in doped band insulators.
Journal ArticleDOI

Suppression of Metal-Insulator Transition in VO2 by Electric Field–Induced Oxygen Vacancy Formation

TL;DR: It is found that electrolyte gating of epitaxial thin films of VO2 suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed.
Journal ArticleDOI

Electrolyte-gated transistors for organic and printed electronics

TL;DR: Recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics is summarized and key developments in electrolyte materials for use in printed electronics are reviewed.
References
More filters
Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

Materials for electrochemical capacitors

TL;DR: This work has shown that combination of pseudo-capacitive nanomaterials, including oxides, nitrides and polymers, with the latest generation of nanostructured lithium electrodes has brought the energy density of electrochemical capacitors closer to that of batteries.
Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Nanostructured materials for advanced energy conversion and storage devices

TL;DR: This review describes some recent developments in the discovery of nanoelectrolytes and nanoeLECTrodes for lithium batteries, fuel cells and supercapacitors and the advantages and disadvantages of the nanoscale in materials design for such devices.
Journal ArticleDOI

Ordering, metastability and phase transitions in two-dimensional systems

TL;DR: In this article, a new definition of order called topological order is proposed for two-dimensional systems in which no long-range order of the conventional type exists, and the possibility of a phase transition characterized by a change in the response of the system to an external perturbation is discussed in the context of a mean field type of approximation.
Related Papers (5)