Journal ArticleDOI
Low-loss lateral micromachined switches for high frequency applications
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TLDR
In this article, two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported, implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam.Abstract:
Two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported. These switches are implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam. It is demonstrated that the insertion loss of the switch is less than 0.2 dB up to 15 GHz and the isolation is higher than 20 dB up to 25 GHz. An RF model of the switches is used to analyse the effects of the switch design parameters and RF performance. The optimization of the switch mechanical design is discussed where the threshold voltage can be lower than 25 V. The lateral switches are fabricated by deep reactive ion etching (DRIE) process on a silicon-on-insulator (SOI) wafer with shadow mask technology.read more
Citations
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Journal ArticleDOI
A tunable planar inverted-F antenna with an RF MEMS switch for the correction of impedance mismatch due to human hand effects
Yong-Hee Park,Jae-Hyoung Park,Yong-Dae Kim,Hee Chul Lee,Hong-Teuk Kim,Jong-Uk Bu,Hyo-Jin Nam +6 more
TL;DR: In this article, a tunable planar inverted-F antenna (PIFA) was demonstrated for the correction of impedance mismatch resulting from the resonant frequency shift in the usage of mobile phones due to human hand effects.
Proceedings ArticleDOI
A Low-Loss Single-Pole-Double-Throw (SPDT) Switch Circuit
M. Tang,Ai Qun Liu,Ajay Agarwal +2 more
TL;DR: A low-loss single-pole-double-throw (SPDT) switch circuit using lateral RF MEMS switches has been developed on glass to operate from DC to 20 GHz as mentioned in this paper.
Proceedings ArticleDOI
In-Plane Electrostatically-Actuated RF MEMS Switch Suspended on a Low-Resistivity Substrate
TL;DR: In this paper, a lateral, resistive-contact electrostatically-actuated RF MEMS switch for ground wireless communication applications is presented, which has been manufactured on a low-resistivity substrate, and its RF performance has been improved by suspending the structures 25 m apart from the substrate.
Journal ArticleDOI
Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation.
Yong Zhu,Jitendra Pal +1 more
TL;DR: In this paper, a laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch is proposed based on a combination of electrothermal actuation and electrostatic latching hold.
Journal ArticleDOI
Time-Efficient Quasi-Static Algorithm for Simulation of Complex Single-Sided Clamped Electrostatic Actuators
TL;DR: In this article, a time and resource-efficient numerical algorithm for quasi-static modeling of the static behavior and the "quasi-static movement" of highly nonlinear electrostatic actuators with single-side clamped moving elements is presented.
References
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Journal ArticleDOI
Performance of low-loss RF MEMS capacitive switches
TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI
Coplanar waveguides and microwave inductors on silicon substrates
TL;DR: In this paper, the authors evaluate the potential of using high-resistivity silicon as a low-cost low-loss microwave substrate through an experimental comparative study and demonstrate that the losses of a coplanar transmission line (CPW) realized on high resistivity (3 k to 7 k /spl Omega/-cm) silicon substrates are comparable to the losses realized on a GaAs substrate covered with insulators.
Journal ArticleDOI
A low voltage actuated micromachined microwave switch using torsion springs and leverage
TL;DR: In this article, a push-pull type microwave switch is proposed, which utilizes torsion springs and leverage for lowvoltage operation, and the actuation voltage is /spl sim/5 V.