Proceedings ArticleDOI
Low voltage stress-induced-leakage-current in ultrathin gate oxides
P.E. Nicollian,Mark S. Rodder,Douglas T. Grider,P. Chen,Robert M. Wallace,Sunil V. Hattangady +5 more
- pp 400-404
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TLDR
In this paper, the authors show that for oxides less than /spl sim/3.5 nm, interfacial traps generated from direct tunneling stress result in a sense voltage dependent SILC mechanism that can dominate the gate leakage current at low operating voltages.Abstract:
Stress-induced-leakage-current (SILC) is an important concern in ultrathin gate oxides because it may impose constraints on dielectric thickness scaling. We show that for oxides less than /spl sim/3.5 nm thick, interfacial traps generated from direct tunneling stress result in a sense voltage dependent SILC mechanism that can dominate the gate leakage current at low operating voltages.read more
Citations
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Journal ArticleDOI
Overview of emerging nonvolatile memory technologies
TL;DR: This review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.
Proceedings ArticleDOI
Experimental evidence for voltage driven breakdown models in ultrathin gate oxides
TL;DR: In this article, the authors show that hole injection does not completely account for all of the trap generation mechanisms observed during direct tunneling stress and that the anode hole injection model is still operative at low voltages.
Journal ArticleDOI
Modeling of SILC based on electron and hole tunneling. II. Steady-state
TL;DR: In this paper, a numerical model for the stationary stress-induced leakage current (SILC) is presented, accounting for both electron and hole tunneling, and the impact of the recombination process on the leakage properties of ultrathin gate is also discussed.
Journal ArticleDOI
Atomic-Scale Defects Involved in the Negative-Bias Temperature Instability
TL;DR: In this article, the authors examined the atomic-scale defects involved in a metal-oxide-silicon field effect transistor reliability problem called the negative bias temperature instability (NBTI).
References
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Journal ArticleDOI
Mechanism for stress-induced leakage currents in thin silicon dioxide films
D. J. DiMaria,Eduard A. Cartier +1 more
TL;DR: In this paper, it was concluded that the generation of neutral electron traps in thin oxides is the dominant cause of leakage currents introduced in the low-field, direct-tunneling regime of thin oxide during high-field stress.
Journal ArticleDOI
Mechanism of stress-induced leakage current in MOS capacitors
TL;DR: In this article, stress-induced leakage current (SILC) is examined both below and above the voltage at which the preexisting Fowler-Nordheim tunneling current dominates.
Proceedings ArticleDOI
Stress-induced current in thin silicon dioxide films
Moazzami,Chenming Hu +1 more
TL;DR: In this article, low-field current following Fowler-Nordheim stress of thin gate oxides is studied and the conduction mechanism is attributed to trap-assisted tunneling of electrons.
Journal ArticleDOI
Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunneling
J. Maserjian,N. Zamani +1 more
TL;DR: In this article, a sensitive probe of the oxide interfacial region, capable of locating and detecting as few as 1010 cm−2 positive states was presented, which is consistent with the mechanism of breaking strained Si-O-Si bonds near the interface, observed in x-ray photoelectron spectroscopy experiments.