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Magnetic bipolar transistor

Jaroslav Fabian, +2 more
- 05 Jan 2004 - 
- Vol. 84, Iss: 1, pp 85-87
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TLDR
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin this article, and it is shown that electrical spin injection through the transistor is possible in the forward active regime.
Abstract
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

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Journal ArticleDOI

Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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Semiconductor Spintronics

TL;DR: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role as mentioned in this paper, and is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism.
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Electric field control of magnetism in multiferroic heterostructures

TL;DR: In this article, the authors review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components.
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Electric field control of magnetism in multiferroic heterostructures

TL;DR: Charge transport phenomena in multiferroic heterostructures, where both magnetic and ferroelectric order parameters are used to control charge transport, suggest new possibilities to control the conduction paths of the electron spin, with potential for device applications.
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New moves of the spintronics tango

TL;DR: A brief overview of the connections between five emerging subfields suggests exciting things to come in spintronics.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
Journal ArticleDOI

Electronic analog of the electro‐optic modulator

TL;DR: In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.
Journal ArticleDOI

Electrical spin injection in a ferromagnetic semiconductor heterostructure

TL;DR: In this paper, the authors reported the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide.
Journal ArticleDOI

Injection and detection of a spin-polarized current in a light-emitting diode

TL;DR: In this article, the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner to inject spin-polarized charge into a non-magnetic semiconductor device.
Journal ArticleDOI

Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals.

TL;DR: Application of small static magnetic fields results in a Hanle effect which permits determination of the spin-relaxation time, and the unique features of the method should make it applicable to a wide range of studies.
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