Mn interstitial diffusion in (ga,mn)as.
K. W. Edmonds,Piotr Boguslawski,Piotr Boguslawski,Kaiyou Wang,R. P. Campion,S. N. Novikov,N. R. S. Farley,B. L. Gallagher,C. T. Foxon,Maciej Sawicki,Tomasz Dietl,M. Buongiorno Nardelli,Jerry Bernholc +12 more
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TLDR
A combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As reveals that electric fields induced by Mn acceptors have a significant effect on the diffusion of Mn interstitials towards the surface.Abstract:
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements during annealing show that the observed changes are due to out diffusion of Mn interstitials towards the surface, governed by an energy barrier of 0.7-0.8 eV. Electric fields induced by Mn acceptors have a significant effect on the diffusion.read more
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Theory of ferromagnetic (III, Mn) V semiconductors
TL;DR: In this article, the current status of the field of (III,Mn)V diluted magnetic semiconductors is reviewed, focusing on the first two, more mature research directions: the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, and the development of spintronic devices with new functionalities.
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First-principles theory of dilute magnetic semiconductors
Kazunori Sato,Lars Bergqvist,Josef Kudrnovský,Peter H. Dederichs,Olle Eriksson,Ilja Turek,Biplab Sanyal,Georges Bouzerar,Hiroshi Katayama-Yoshida,Van An Dinh,Tetsuya Fukushima,Hidetoshi Kizaki,Rudolf Zeller +12 more
TL;DR: In this article, a review summarizes recent first-principles investigations of the electronic structure and magnetism of dilute magnetic semiconductors (DMSs), which are interesting for applications in spintronics.
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Ferromagnetic semiconductors
TL;DR: The current status and prospects of research on ferromagnetism in semiconductors are reviewed in this article, where the authors present a quantitative comparison between experimental and theoretical results for Mn-based III-V and II-VI compounds, showing that the current theory of the exchange interactions mediated by holes in the valence band describes correctly the values of Curie temperatures.
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Ferromagnetic semiconductors: moving beyond (Ga,Mn)As
TL;DR: The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, that is, electronics that exploit carrier spin polarization.
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Spin dynamics in semiconductors
TL;DR: In this paper, the current status of spin dynamics in semiconductors is reviewed and a fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is comprehensively reviewed.
References
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Book
Atomic Diffusion in III-V Semiconductors
TL;DR: In this article, the authors present a review of the diffusion in III-V semiconductors and discuss the basic elements of diffusion in the 3-V group, including shallow donors, shallow acceptors, transition elements and very fast-diffusing elements.