Journal ArticleDOI
Modeling and Characterization of On-Chip Transformers for Silicon RFIC
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In this paper, a broadband and scalable lumped-element model for silicon on-chip transformers is presented, which is driven from layout and process technology specifications, and simple and accurate expressions for evaluating the self inductance and the mutual coupling coefficient are provided.Abstract:
A broadband and scalable lumped-element model for silicon on-chip transformers is presented. Model elements are driven from layout and process technology specifications. We provide simple and accurate expressions for evaluating the self inductance and the mutual coupling coefficient. The effects of various layout parameters, including transformer area, number of turns, and turns ratio, on transformer electrical response have been investigated. Model accuracy is demonstrated by comparing simulated and measured S-parameters, minimum insertion loss, quality factor, coils inductance, and magnetic coupling of several transformers with a wide range of configurationsread more
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Book ChapterDOI
The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES
TL;DR: In this paper, an expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Journal ArticleDOI
Three-dimensional radio-frequency transformers based on a self-rolled-up membrane platform
Wen Huang,Jingchao Zhou,Paul Froeter,Kathy Walsh,Siyu Liu,Mark D. Kraman,Moyang Li,Julian A. Michaels,Dane J. Sievers,Songbin Gong,Xiuling Li +10 more
TL;DR: On-chip radio-frequency transformers made from three-dimensional self-rolled-up coils offer both high performance and an ultra-compact device footprint and by using only planar processing.
Journal ArticleDOI
Design and Analysis of a 21–29-GHz Ultra-Wideband Receiver Front-End in 0.18- $\mu$ m CMOS Technology
TL;DR: In this paper, the design and analysis of 21-29 GHz CMOS low-noise amplifier, balun and mixer in a standard 0.18-μm CMOS process for ultra-wideband automotive radar systems is presented.
Journal ArticleDOI
Fully Symmetrical Monolithic Transformer (True 1 : 1) for Silicon RFIC
Chee Chong Lim,Kiat Seng Yeo,Kok Wai Chew,A. Cabuk,Jiangmin Gu,Suh Fei Lim,Chirn Chye Boon,Manh Anh Do +7 more
TL;DR: In this paper, a 1 : 1 transformer configuration with identical inductor pair, a higher individual coil self-resonant frequency (SRF), and excellent area efficiency is presented.
Journal ArticleDOI
Transformer-Feedback Interstage Bandwidth Enhancement for MMIC Multistage Amplifiers
Gholamreza Nikandish,Ali Medi +1 more
TL;DR: In this article, the authors proposed a transformer feedback (TRFB) inter-stage bandwidth enhancement technique for broadband multistage amplifiers, which can provide higher bandwidth compared to the conventional techniques based on reactive impedance matching networks.
References
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Journal Article
The design of CMOS radio-frequency integrated circuits, 2nd edition
TL;DR: This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Book
The Design of CMOS Radio-Frequency Integrated Circuits
TL;DR: In this article, the authors present an expanded and thoroughly revised edition of Tom Lee's acclaimed guide to the design of gigahertz RF integrated circuits, which is packed with physical insights and design tips, and includes a historical overview of the field in context.
Journal ArticleDOI
On-chip spiral inductors with patterned ground shields for Si-based RF ICs
Chik Patrick Yue,S. Simon Wong +1 more
TL;DR: In this paper, a patterned ground shield is inserted between an on-chip spiral inductor and silicon substrate to increase the quality of a 2 GHz LC tank by up to 33% and reduce substrate coupling between two adjacent inductors.
Journal ArticleDOI
Monolithic transformers for silicon RF IC design
TL;DR: A comprehensive review of the electrical performance of passive transformers fabricated in silicon IC technology is presented, and the characteristics of two-port and multiport transformers and baluns are presented from both computer simulation and experimental measurements.
Journal ArticleDOI
Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs
Ali M. Niknejad,Robert G. Meyer +1 more
TL;DR: In this article, the authors used classic circuit analysis and network analysis techniques to derive two-port parameters from spiral inductors and transformers and applied them to traditional square and polygon inductors, as well as multilayer metal structures and coupled inductors.