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Journal ArticleDOI

On-chip spiral inductors with patterned ground shields for Si-based RF ICs

Chik Patrick Yue, +1 more
- 01 May 1998 - 
- Vol. 33, Iss: 5, pp 743-752
TLDR
In this paper, a patterned ground shield is inserted between an on-chip spiral inductor and silicon substrate to increase the quality of a 2 GHz LC tank by up to 33% and reduce substrate coupling between two adjacent inductors.
Abstract
This paper presents a patterned ground shield inserted between an on-chip spiral inductor and silicon substrate. The patterned ground shield can be realized in standard silicon technologies without additional processing steps. The impacts of shield resistance and pattern on inductance, parasitic resistances and capacitances, and quality factor are studied extensively. Experimental results show that a polysilicon patterned ground shield achieves the most improvement. At 1-2 GHz, the addition of the shield increases the inductor quality factor up to 33% and reduces the substrate coupling between two adjacent inductors by as much as 25 dB. We also demonstrate that the quality factor of a 2-GHz LC tank can be nearly doubled with a shielded inductor.

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Citations
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A filtering technique to lower LC oscillator phase noise

TL;DR: Based on a physical understanding of phase-noise mechanisms, a passive LC filter was found to lower the phasenoise factor in a differential oscillator to its fundamental minimum in this paper.
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A Low-Power Integrated Circuit for a Wireless 100-Electrode Neural Recording System

TL;DR: A prototype integrated circuit for wireless neural recording from a 100-channel microelectrode array was developed and a two-chip system was used to record neural signals from a Utah Electrode Array in cat cortex and transmit the digitized signals wirelessly to a receiver.
Journal ArticleDOI

Physical modeling of spiral inductors on silicon

TL;DR: In this article, the authors present a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance in the spiral, substrate ohmic loss, and substrate capacitance.
Journal ArticleDOI

MEMS technology for timing and frequency control

TL;DR: As vibrating RF MEMS devices are perceived more as circuit building blocks than as stand-alone devices, and as the frequency processing circuits they enable become larger and more complex, the makings of an integrated micromechanical circuit technology begin to take shape, perhaps with a functional breadth not unlike that of integrated transistor circuits.
Journal ArticleDOI

Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs

TL;DR: In this article, the authors used classic circuit analysis and network analysis techniques to derive two-port parameters from spiral inductors and transformers and applied them to traditional square and polygon inductors, as well as multilayer metal structures and coupled inductors.
References
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Journal ArticleDOI

Design of Planar Rectangular Microelectronic Inductors

TL;DR: In this paper, the authors derived inductance equations for planar thin- or thick-film coils, comparing equations that include negative mutual inductance with those that do not, and presented a computer program developed for calculating inductances for both square and rectangular geometries, the variables considered being track width, space between tracks, and number of turns.
Proceedings ArticleDOI

On-chip Spiral Inductors With Patterned Ground Shields For Si-based RF IC's

TL;DR: In this paper, a patterned ground shield is proposed to reduce the unwanted substrate effects by shielding the electric field of an on-chip spiral inductor from the silicon substrate, which can be realized in standard silicon technologies without additional processing steps.
Journal ArticleDOI

Formulas for the Skin Effect

H.A. Wheeler
TL;DR: In this article, the skin effect is used to determine the surface resistivity of conductors at a wide range of frequency bands, including those of wires, transmission lines, and coils.
Journal ArticleDOI

Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier

TL;DR: In this paper, large spiral inductors encased in oxide over silicon are shown to operate beyond the UHF band when the capacitance and loss resistance are greatly reduced by selective removal of the underlying substrate.
Journal ArticleDOI

Properties of Microstrip Line on Si-SiO/sub 2/ System

TL;DR: In this article, a parallel-plate waveguide model for the microstrip line formed on the Si-SiO/sub 2/ system is analyzed theoretically and the results are compared with the experiment.
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