Journal ArticleDOI
Morphology and Formation Mechanisms of Porous Silicon
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In this paper, a conceptual analysis of the various aspects in the morphology and formation mechanisms of porous silicon in light of currently available information on the fundamental reaction processes on silicon electrodes is presented.Abstract:
Porous silicon exhibits extremely rich morphological features resulting from a set of very complex reaction processes at the silicon/electrolyte interface. Numerous theories have been proposed since its discovery more than four decades ago, but there is still a lack of complete understanding of the formation mechanisms with respect to the observed morphological details. This paper attempts to provide a conceptual analysis of the various aspects in the morphology and formation mechanisms of porous silicon in light of currently available information on the fundamental reaction processes on silicon electrodes.read more
Citations
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Journal ArticleDOI
Porous silicon in drug delivery devices and materials
TL;DR: The optical properties of photonic structures prepared from porous Si or SiO2 hosts provide a self-reporting feature that can be monitored in vivo.
Journal ArticleDOI
Black silicon: fabrication methods, properties and solar energy applications
Xiaogang Liu,Xiaogang Liu,Paul R. Coxon,Marius Peters,Bram Hoex,Jacqueline M. Cole,Jacqueline M. Cole,Derek J. Fray +7 more
TL;DR: In this article, the use of black silicon (BSi) as an anti-reflection coating in solar cells is examined and appraised, based upon strategies towards higher efficiency renewable solar energy modules.
Book
Porous Silicon in Practice: Preparation, Characterization and Applications
TL;DR: Porosity, Pore size, and pore size distribution in the x-y plane using physical or virtual masks were measured in this paper, showing that porosity and thickness of porosity can be measured using lift-off films of Porous Silicon.
Journal ArticleDOI
Nanoporous inorganic membranes or coatings for sustained drug delivery in implantable devices.
TL;DR: Nanoporous inorganic coatings are well suited to provide improved efficacy and integration of implants in a variety of therapeutic situations and can be used effectively for sustained release applications.
Journal ArticleDOI
Porous silicon chemical sensors and biosensors: A review
TL;DR: The use of porous silicon (PSi) as a sensor for detection of various analytes is reviewed in this article, where the authors provide a critical assessment of the development of PSi as a promising material for chemical and biosensing applications.
References
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Journal ArticleDOI
Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
TL;DR: In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.
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Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Porous silicon formation mechanisms
TL;DR: In this article, various models describing porous silicon formation are reviewed and the known electrochemical and morphological properties are discussed with the intention of unifying the different models into a comprehensive explanation for the formation of a porous structure in silicon.
Journal ArticleDOI
The Physics of Macropore Formation in Low‐Doped p‐Type Silicon
Volker Lehmann,S. Ronnebeck +1 more
TL;DR: In this article, the pore walls in hydrofluoric acid are caused by a depletion of holes due to the n-type doping of the substrate, and the dimensions of the pores are estimated based on these findings.
Journal ArticleDOI
Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon
Volker Lehmann,Helmut Föll +1 more
TL;DR: In this article, the spontaneous trench formation in n-type silicon immersed in hydrofluoric acid under anodic bias is demonstrated and the resulting microstructures are characterized and explained by a model which takes into account the conditions of the space charge region the minority carrier current and the crystal orientation.