Journal ArticleDOI
The Physics of Macropore Formation in Low‐Doped p‐Type Silicon
Volker Lehmann,S. Ronnebeck +1 more
Reads0
Chats0
TLDR
In this article, the pore walls in hydrofluoric acid are caused by a depletion of holes due to the n-type doping of the substrate, and the dimensions of the pores are estimated based on these findings.Abstract:
Macropore formation in n‐type silicon is a self‐adjusting phenomenon characterized by a specific current density at the pore tip. At this specific current density, the dissolution reaction changes from the charge‐transfer‐limited to the mass‐transfer‐limited regime. The passivation of the pore walls in hydrofluoric acid is caused by a depletion of holes due to the n‐type doping of the substrate. Equations based on these findings are presented and allow us to precalculate the dimensions of the pores. The validity of the model and its mathematical description is verified in experiments. Pores of a depth up to the wafer thickness and aspect ratios of 250 were etched using this method.read more
Citations
More filters
Journal ArticleDOI
Metal-Assisted Chemical Etching of Silicon: A Review
TL;DR: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching, and introduces templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithographic, and block-copolymer masks.
BookDOI
The MEMS Handbook
TL;DR: In this paper, the authors present a detailed overview of the history of the field of flow simulation for MEMS and discuss the current state-of-the-art in this field.
Journal ArticleDOI
Formation and application of porous silicon
TL;DR: In this article, all manifestations of pores in silicon are reviewed and discussed with respect to possible applications, with particular emphasis on macropores, which are classified in detail and reviewed in the context of pore formation models.
Journal ArticleDOI
One dimensional nanostructured materials
TL;DR: In this paper, the authors focus on the science behind the synthesis and properties of the ODNS rather than the device fabrication, and discuss current research related to environment and toxicology effects and current challenges in this rapidly evolving field.
Journal ArticleDOI
Motility of metal nanoparticles in silicon and induced anisotropic silicon etching
TL;DR: In this article, an electrokinetic model has been formulated, which satisfactorily explains the microscopic dynamic origin of motility of metal particles in Si, and provides a facile approach to produce various Si nanostructures, especially ordered Si nanowire arrays from Si wafers of desired properties.
References
More filters
Related Papers (5)
Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon
Volker Lehmann,Helmut Föll +1 more