Open Access
Nano-scale TG-FinFET: Simulation and Analysis
TLDR
The American University in Cairo and the Zewail City of Science and Technology as discussed by the authors proposed a new center of nano-electronics and devices (CND) for nanoelectronic devices.Abstract:
Center of Nano-electronics and Devices (CND)
The American University in Cairo
Zewail City of Science and Technologyread more
Citations
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Proceedings ArticleDOI
The Monte Carlo method for semiconductor device simulation
TL;DR: If the authority ascribed to Monte Carlo models of devices at 1/spl mu/m feature size is to be maintained, modelling of the fundamental physics must be further improved, and the device model must be made more realistic.
References
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Journal ArticleDOI
A roadmap for graphene
Kostya S. Novoselov,Vladimir I. Fal'ko,Luigi Colombo,Paul Gellert,M. G. Schwab,Kyoung-Soo Kim +5 more
TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
MonographDOI
The physics of low-dimensional semiconductors : an introduction
TL;DR: In this paper, the Golden Rule is applied to properties of quantum wells and the properties of GaAs-AlAs alloys at room temperature and the Hermite's equation: harmonic oscillator.
Journal ArticleDOI
Multiple-gate SOI MOSFETs
TL;DR: In this paper, the authors describe the evolution and properties of a new class of MOSFETs, called triple-plus (3 + )-gate devices, which offer a practical solution to the problem of the ultimate, yet manufacturable, silicon MOS-FET.
Journal ArticleDOI
Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
TL;DR: In the current generation of transistors, the transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in transistor size can continue.
Journal ArticleDOI
Elementary scattering theory of the Si MOSFET
TL;DR: In this article, a simple one-flux scattering theory of the silicon MOSFET is introduced, where currentvoltage characteristics are expressed in terms of scattering parameters rather than a mobility.