Journal ArticleDOI
Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells
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In this paper, nonresonant carrier tunneling is investigated by time-resolved and time-averaged optical methods for a series of samples with various barrier thicknesses.Abstract:
Nonresonant carrier tunneling is investigated by time‐resolved and time‐averaged optical methods for a series of samples with various barrier thicknesses. The electron tunneling times decrease exponentially with the decrease of barrier thickness from 8 to 3 nm, and the trend is well described by a semiclassical model. Additional efficient hole tunneling is observed in the 3 nm barrier sample, and the time constant is of the order of 50 ps.read more
Citations
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Journal ArticleDOI
Quantum well carrier sweep out: relation to electroabsorption and exciton saturation
TL;DR: In this article, the effects of changing the barrier design of GaAs-Al/sub x/Ga/sub 1-x/As quantum wells on the electroabsorption, exciton saturation, and carrier sweep-out times were studied.
Book ChapterDOI
Ultrafast spectroscopy of semiconductors
TL;DR: In this paper, the authors report some applications of ultrafast laser spectroscopy to bulk and quantum well III-V and II-VI semiconductors in order to illustrate the potential.
Journal ArticleDOI
Tunnelling and relaxation in semiconductor double quantum wells
R Ferreira,G Bastard +1 more
TL;DR: In this paper, a review of the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells is presented. But this review is limited to double quantum well structures.
Journal ArticleDOI
Fabrication and optical properties of semiconductor quantum wells and superlattices
Ernst O. Göbel,Klaus H. Ploog +1 more
Journal ArticleDOI
Nonresonant carrier tunneling in arrays of silicon nanocrystals
TL;DR: In this paper, it was shown that nonresonant carrier tunneling in ensembles of silicon nanocrystals is a controlling factor in the luminescence of silicon microphotonics.
References
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Journal ArticleDOI
Resonant tunneling in semiconductor double barriers
TL;DR: In this article, a double-barrier structure with a thin GaAs sandwiched between two GaAlas barriers has been shown to have resonance in the tunneling current at voltages near the quasistationary states of the potential well.
Journal ArticleDOI
Superlattice band structure in the envelope-function approximation
TL;DR: In this paper, the band structure of GaAs-GaAlAs and InAsGaSb superlattices is calculated by matching propagating or evanescent envelope functions at the boundary of consecutive layers.
Journal ArticleDOI
Linewidth dependence of radiative exciton lifetimes in quantum wells
Jochen Feldmann,G. Peter,Ernst O. Göbel,Philip Dawson,Karen J. Moore,C. T. Foxon,R. J. Elliott +6 more
TL;DR: The fundamental relationship between radiative lifetime and spectral linewidth of freeexcitons is demonstrated theoretically and experimentally for quasi 2D excitons in GaAs/AlGaAs quantum wells.
Journal ArticleDOI
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
TL;DR: In this article, a simple expression for the low field mobility in the miniband conduction regime is derived; localization effects, hopping conduction, and effective mass filtering are discussed.