Journal ArticleDOI
Novel Zn-Doped ${\rm Al}_{2}{\rm O}_{3}$ Charge Storage Medium for Light-Erasable In–Ga–Zn–O TFT Memory
TLDR
In this article, a novel Zn-doped Al2O3 (ZAO) layer prepared by atomic layer deposition (ALD) is used as the charge storage medium in an In-Ga-Zn-O thin-film transistor memory.Abstract:
A novel Zn-doped Al2O3 (ZAO) layer prepared by atomic layer deposition (ALD) is used as the charge storage medium in an In-Ga-Zn-O thin-film-transistor memory. The gate insulating stack of Al2O3/ZAO/Al2O3 is assembled in a single ALD step, and is found to possess a high electron storage capacity due to very deep defect levels. The memory device shows a threshold voltage shift as large as 6.38 V after a +15V/1 ms programming pulse, and quite good charge retention. Once programmed, the memory can be only light erased. The underlying mechanisms are discussed with the assistance of density functional theory calculations.read more
Citations
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Journal ArticleDOI
All inorganic solution processed three terminal charge trapping memory device
TL;DR: In this article, a charge-trapping memory device with a bottom-gated architecture fabricated by sol-gel process technique at temperatures as low as 300 °C is presented.
Journal ArticleDOI
Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric
Ya Li,Yanli Pei,Ruiqin Hu,Zimin Chen,Yiqiang Ni,Jiayong Lin,Yiting Chen,Xiaoke Zhang,Zhen Shen,Jun Liang,Bingfeng Fan,Gang Wang,He Duan +12 more
TL;DR: In this paper, a nonvolatile memory (NVM) based on an amorphous-indium-gallium-zinc oxide (a-IGZO) thin-film transistor with defect-engineered gate insulator was demonstrated.
Journal ArticleDOI
Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer
TL;DR: In this article, a charge-trap-type memory transistor with a top-gate structure composed of Al2O3 blocking/ZnO charge trap/IGZO active/Al2O 3 tunneling layer was proposed.
Journal ArticleDOI
Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al2O3/Zn-doped Al2O3/Al2O3 stacks
TL;DR: In this article, the authors studied how electrical erasing of indium gallium zinc oxide-thin-film transistor memory was improved by adding concurrent irradiation with monochromatic light (ML).
Journal ArticleDOI
Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer
TL;DR: In this article, a top-gate-structured charge-trap-type memory thin-film transistors (CTM-TFTs) using In-Ga-Zn-O (IGZO) channel and ZnO chargetrap layers were proposed to investigate effects of conductivity modulation for charge trap layers on the memory performances.
References
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Journal ArticleDOI
Review paper: Transparent amorphous oxide semiconductor thin film transistor
TL;DR: In this paper, the authors reviewed and summarized recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of the fabrication process on electrical performance of thin film transistors with oxide semiconductors.
Journal ArticleDOI
Low Temperature ( < 100 ° C ) Deposition of Aluminum Oxide Thin Films by ALD with O3 as Oxidant
TL;DR: In this paper, a 2 O 3 films were deposited by ALD using trimethylaluminum and O 3 as precursor and oxidant, respectively, at growth temperatures ranging from room temperature to 300°C on Si(100) substrates.
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Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric
TL;DR: In this paper, a transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate dielectric stack as the charge storage medium.
Journal ArticleDOI
Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination
TL;DR: In this article, the authors used the State Key Program for Basic Research of China under Grant Nos. 2010CB327504,======2011CB922100, 2011CB301900; the National Natural Science Museum of China and the China Natural Science Foundation under Grant No. 60825401,======60936004, 11104130, BK2011556, and BK 2011050.
Journal ArticleDOI
Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
TL;DR: In this article, a fully transparent nonvolatile memory with the conventional sandwich gate insulator structure was demonstrated using wide band gap amorphous GaInZnO thin films as both the charge trap layer and the transistor channel layer.