Journal ArticleDOI
All inorganic solution processed three terminal charge trapping memory device
TLDR
In this article, a charge-trapping memory device with a bottom-gated architecture fabricated by sol-gel process technique at temperatures as low as 300 °C is presented.Abstract:
We demonstrate charge trapping memory devices comprising aluminum oxide phosphate (ALPO) blocking/indium gallium zinc oxide charge-trapping/ALPO tunneling layers with a bottom-gated architecture fabricated by sol-gel process technique at temperatures as low as 300 °C. The memory device offers a large memory hysteresis of 13.5 V in the Id–Vg curve when the gate voltage is swept from −20 to +30 V and back. The true program-erase (P/E) window of 7 V is established for the P/E square pulse of ±20 V s−1. Good retention characteristic is confirmed within the experimental limit of 104 s. The P/E mechanism is illustrated by the complete band structure of the memory devices. We also demonstrate a control device without a charge trapping layer, which shows excellent thin film transistor characteristics.read more
Citations
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Journal ArticleDOI
Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification
Journal ArticleDOI
Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics
Sandip Mondal,Arvind Kumar +1 more
TL;DR: In this paper, the authors demonstrate the electronic trap energy distribution in the wide bandgap, non-conventional aluminum oxide phosphate (ALPO) dielectrics using the gate injection high-speed capacitance-voltage measurement technique and verified through conventional deep-level transient spectroscopy.
Journal ArticleDOI
Gate-Controllable Electronic Trap Detection in Dielectrics
TL;DR: In this paper, a gate controllable electronic trap detection method was demonstrated by regulating the gate potential of MIS devices based on shift of capacitance-voltage (CV) curve as well as flatband voltage measure in $ due to injection or ejection of electrons through the metal gate.
Journal ArticleDOI
Characterization of nanostructured nickel cobalt oxide-polyvinyl alcohol composite films for supercapacitor application
TL;DR: In this paper, thin films of nickel cobalt oxide and polyvinyl alcohol nanocomposite (NCO-PVA) are prepared by chemical methods and the as-prepared NCO-pVA films have been structurally studied by X-ray diffraction and Fourier transform infrared spectroscopy.
Posted Content
Gate-controllable electronic trap detection in dielectrics
TL;DR: In this paper, a gate controllable electronic trap detection method was demonstrated by regulating the gate potential of MIS devices based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than 10 microseconds due to injection or ejection of electrons through the metal gate.
References
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Journal ArticleDOI
Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
Yong-Hoon Kim,Jae Sang Heo,Taehyeong Kim,Sungjun Park,Myung-Han Yoon,Jiwan Kim,Min Suk Oh,Gi-Ra Yi,Yong-Young Noh,Sung Kyu Park +9 more
TL;DR: Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature, which is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that ofthin- film transistors based on thermally annealed materials.
Journal ArticleDOI
High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
Min-Kyu Kim,Jong Han Jeong,Hun Jung Lee,Tae Kyung Ahn,Hyun Soo Shin,Jin-Seong Park,Jae Kyeong Jeong,Yeon-Gon Mo,Hye-Dong Kim +8 more
TL;DR: In this article, thin film transistors (TFTs) were fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching.
Journal ArticleDOI
All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator
Journal ArticleDOI
Carrier Transport Mechanism in a Nanoparticle-Incorporated Organic Bistable Memory Device
TL;DR: In this paper, the conduction mechanism in nanoparticle-contained polymer memory was investigated experimentally and theoretically and the currentvoltage characteristics showed that the device switches from an initial low-conductivity state to a high-conductive state upon application of an external electric field at room temperature.
Journal ArticleDOI
Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric
TL;DR: In this paper, a transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate dielectric stack as the charge storage medium.
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