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Journal ArticleDOI

Optical reflectivity of micromachined {111}-oriented silicon mirrors for optical input - output couplers

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TLDR
In this paper, the authors describe the silicon mirror processing conditions, measured reflectivities, reflected beam profiles, and a prototype integrated optical I-O coupler with the realized mirrors, enabling them to envisage a synchronized optical clock distribution system as well as a distributed remote optical sensing system with low manufacturing cost.
Abstract
In this work, bulk-micromachined -oriented silicon mirrors at have been fabricated in 20 wt% KOH solution at various temperatures and characterized with single-mode fibers (10/125 and 5/125). In fabricating the mirrors, the etch rate of the (100) silicon surface was widely varied from 5.3 to as the processing temperatures were varied from 40 to C. In spite of the tremendous variation of etch rate, the measured reflectivities of the mirrors showed fairly stable values of 63.7 - 58% at 1330 nm and 55.4 - 57.7% at 1550 nm. This paper describes the silicon mirror processing conditions, measured reflectivities, reflected beam profiles, and a prototype integrated optical I - O coupler with the realized mirrors. The results obtained from this work show that optical I - O couplers with mirrors on conventional (100)-oriented silicon wafers are feasible, enabling us to envisage a synchronized optical clock distribution system as well as a distributed remote optical sensing system with low manufacturing cost.

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Integrated Interconnect Technologies for 3D Nanoelectronic Systems

TL;DR: In this article, the authors present a broad overview of the latest advances in high-density compliant electrical interconnects, nanophotonics, and microfluidics for 3D GSI/TSI realization.
Journal ArticleDOI

The role of Triton surfactant in anisotropic etching of {1 1 0} reflective planes on (1 0 0) silicon

TL;DR: In this paper, Triton-x-100 surfactant was used as an additive to 25% TMAH in anisotropic etching of {1 1 0} silicon passive mirror planes.
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Optical proximity communication using reflective mirrors.

TL;DR: With wavelength division multiplexing (WDM) enabled OPxC, very high bandwidth density I/O, orders of magnitude higher than the traditional electrical I/W, can be achieved for silicon chips.
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Optical Proximity Communication With Passively Aligned Silicon Photonic Chips

TL;DR: In this paper, a high-fidelity 10-Gb/s optical-proximity communication using reflecting mirrors micro-machined into silicon and co-integrated with low-loss silicon-on-insulator waveguides for packaged chip-to-chip communication is reported.
Journal ArticleDOI

Impact of alcohol additives concentration on etch rate and surface morphology of (100) and (110) Si substrates etched in KOH solutions

TL;DR: In this paper, the influence of alcohol concentration on etch rate and surface morphology of (100) and (110) Si planes was investigated and the etching processes were carried out in KOH solutions with different concentrations of isopropanol and butanols.
References
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Journal ArticleDOI

Silicon as a mechanical material

TL;DR: This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures.
Journal Article

Silicon as a mechanical material

TL;DR: In this article, the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures are discussed.
Journal ArticleDOI

Anisotropic Etching of Crystalline Silicon in Alkaline Solutions I . Orientation Dependence and Behavior of Passivation Layers

TL;DR: In this article, the anisotropic etching behavior of single-crystal silicon and the behavior of and in an ethylenediamine-based solution as well as in aqueous,, and were studied.
Proceedings ArticleDOI

Wet chemical etching mechanism of silicon

TL;DR: In this paper, the authors review what can be said on wet chemical etching of single crystals from the viewpoint of crystal growth and explain the minimum of the etch rate in KOH:H/sub 2/O in the direction.
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