Journal ArticleDOI
Origins of the p -type nature and cation deficiency in Cu 2 O and related materials
TLDR
In this article, a first-principle calculation of equilibrium nonstoichiometry and defect stability is proposed to explain why oxides are both $p$-type and naturally cation-deficient, whereas in other oxides (e.g., ZnO and MgO), they lead to localized, nonconductive states.Abstract:
While most of crystalline wide gap oxides are both stoichiometric and insulating, a handful of them including ZnO and ${\mathrm{In}}_{2}{\mathrm{O}}_{3}$ are naturally anion-deficient and electron conductors. Even fewer of the oxides are naturally cation-deficient and hole conductors, the arch-type of which is ${\mathrm{Cu}}_{2}\mathrm{O}$. Based on first principles calculation of equilibrium nonstoichiometry and defect stability, we explain why the ${\mathrm{Cu}}^{(I)}({d}^{10})$ oxide-based materials are both $p$-type and naturally cation-deficient, and why cation vacancies lead to delocalized, conductive states, whereas in other oxides (e.g., ZnO and MgO), they lead to localized, nonconductive states.read more
Citations
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
Stephan Lany,Alex Zunger +1 more
TL;DR: In this paper, the authors compared the results of different gap-correction methods and concluded that to date there is no universal scheme for band gap correction in general defect systems, and they turn instead to classification of different types of defect behavior to provide guidelines on how the physically correct situation in an LDA defect calculation can be recovered.
Journal ArticleDOI
Recent advances in metal sulfides: from controlled fabrication to electrocatalytic, photocatalytic and photoelectrochemical water splitting and beyond
Sundaram Chandrasekaran,Lei Yao,Libo Deng,Christopher R. Bowen,Yan Zhang,Sanming Chen,Zhiqun Lin,Feng Peng,Peixin Zhang +8 more
TL;DR: A variety of strategies such as structural tuning, composition control, doping, hybrid structures, heterostructures, defect control, temperature effects and porosity effects on metal sulfide nanocrystals are discussed and how they are exploited to enhance performance and develop future energy materials.
Journal ArticleDOI
Binary copper oxide semiconductors: From materials towards devices
Bruno K. Meyer,Angelika Polity,Daniel Reppin,Martin Becker,P. Hering,Peter J. Klar,Th. Sander,Christian T. Reindl,J. Benz,Martin Eickhoff,Christian Heiliger,Markus Heinemann,Jürgen Bläsing,Alois Krost,S. Shokovets,C. Müller,Carsten Ronning +16 more
TL;DR: In this article, the performance of three distinctly different phases, Cu2O, Cu4O3, and CuO, of this binary semiconductor can be prepared by thin-film deposition techniques, which differ in the oxidation state of copper.
Journal ArticleDOI
Recent Developments in p-Type Oxide Semiconductor Materials and Devices.
TL;DR: P-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market, and recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.
References
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Book
The Defect Chemistry of Metal Oxides
TL;DR: In this paper, the authors present a more complex Kroeger-Vink diagram for MX with Schottky disorder, which they use to represent the effect of impurities on the concentration of defect complexes.