Journal ArticleDOI
Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
Wojciech Knap,Frederic Teppe,Yahya Moubarak Meziani,N. Dyakonova,J. Lusakowski,Frederic Boeuf,Thomas Skotnicki,Duncan K. Maude,Sergey Rumyantsev,Michael Shur +9 more
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TLDR
In this article, the photoresponse to sub-THz (120GHz) radiation of Si field effect transistors (FETs) with nanometer and sub-micron gate lengths at 300K was investigated.Abstract:
We report on experiments on photoresponse to sub-THz (120GHz) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at 300K. The observed photoresponse is in agreement with predictions of the Dyakonov–Shur plasma wave detection theory. This is experimental evidence of the plasma wave detection by silicon FETs. The plasma wave parameters deduced from the experiments allow us to predict the nonresonant and resonant detection in THz range by nanometer size silicon devices—operating at room temperature.read more
Citations
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Journal ArticleDOI
A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology
TL;DR: Active multi-pixel imaging of postal envelopes demonstrates the FPAs potential for future cost-effective terahertz imaging solutions.
Journal ArticleDOI
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
R. Tauk,Frederic Teppe,S. Boubanga,D. Coquillat,Wojciech Knap,Yahya Moubarak Meziani,C. Gallon,Frederic Boeuf,Thomas Skotnicki,Claire Fenouillet-Beranger,Duncan K. Maude,Sergey L. Rumyantsev,Michael Shur +12 more
TL;DR: In this paper, Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300nm have been studied as room temperature plasma wave detectors of 0.7THz electromagnetic radiation.
Journal ArticleDOI
A 1 k-Pixel Video Camera for 0.7–1.1 Terahertz Imaging Applications in 65-nm CMOS
R. Al Hadi,Hani Sherry,Janusz Grzyb,Yan Zhao,Wolfgang Forster,Hans M. Keller,Andreia Cathelin,Andreas Kaiser,Ullrich R. Pfeiffer +8 more
TL;DR: A 1 k-pixel camera chip for active terahertz video recording at room-temperature has been fully integrated in a 65-nm CMOS bulk process technology and includes row and column select and integrate-and-dump circuitry capable of capturing terAhertz videos up to 500 fps.
Journal ArticleDOI
Broadband terahertz imaging with highly sensitive silicon CMOS detectors
Franz Schuster,D. Coquillat,H. Videlier,Maciej Sakowicz,Frederic Teppe,Laurent Dussopt,Benoit Giffard,Thomas Skotnicki,Wojciech Knap +8 more
TL;DR: Terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz in the important atmospheric window around 300 GHz and at room temperature.
Journal ArticleDOI
Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors
Alvydas Lisauskas,Ullrich R. Pfeiffer,Erik Öjefors,Peter Haring Bolívar,Diana Glaab,Hartmut G. Roskos +5 more
TL;DR: In this paper, the effect of shunting in the framework of the Dyakonov-Shur plasma-wave theory was theoretically studied, with the following key results: in the quasistatic limit, the capacitive shunt induces the longitudinal high-frequency field neede...
References
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Journal ArticleDOI
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current.
Michael Dyakonov,Michael Shur +1 more
TL;DR: It is shown that a relatively slow electron flow should be unstable because of plasma wave amplification due to the reflection from the device boundaries, which provides a new mechanism for the generation of tunable far infrared electromagnetic radiation.
Journal ArticleDOI
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid
Michel Dyakonov,Michael Shur +1 more
TL;DR: In this article, a short channel High Electron Mobility Transistor (HEMT) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device.
Journal ArticleDOI
Nonresonant Detection of Terahertz Radiation in Field Effect Transistors
Wojciech Knap,V. Kachorovskii,Yanqing Deng,Sergey Rumyantsev,Jian Lu,Remigijus Gaska,Michael Shur,Grigory Simin,Xiaobo Sharon Hu,M. Asif Khan,C. A. Saylor,L. C. Brunel +11 more
TL;DR: In this paper, the photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage, which can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.
Journal ArticleDOI
Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
Wojciech Knap,J. Lusakowski,T. Parenty,Sylvain Bollaert,A. Cappy,Vyacheslav V. Popov,Michael Shur +6 more
TL;DR: In this paper, the resonant, voltage tunable emission of terahertz radiation (0.4 − 1.0 THz) from a gated two-dimensional electron gas in a 60 nm InGaAs high electron mobility transistor was investigated.
Journal ArticleDOI
Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors
Xomalin G. Peralta,S. J. Allen,Michael C. Wanke,N. E. Harff,Jerry A. Simmons,Michael Lilly,John L. Reno,Peter Burke,J. P. Eisenstein +8 more
TL;DR: In this article, double-quantum well field effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity, determined by the plasma oscillations of the composite structure.
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Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current.
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