Journal ArticleDOI
Progress and outlook for MRAM technology
Saied N. Tehrani,Jon M. Slaughter,Eugene Youjun Chen,M. Durlam,Jing Shi,M. DeHerrera +5 more
- Vol. 35, Iss: 5, pp 2814-2819
TLDR
Progress on improving the material structures, memory bits, thermal stability of the bits, and competitive architectures for GMR and MTJ based MRAM memories as well as the potential of these memories in the commercial memory market are discussed.Abstract:
We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM),a semiconductor memory with magnetic bits for nonvolatile storage. MRAM architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel Junction (MTJ) cells are described. This paper will discuss our progress on improving the material structures, memory bits, thermal stability of the bits, and competitive architectures for GMR and MTJ based MRAM memories as well as the potential of these memories in the commercial memory market.read more
Citations
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Journal ArticleDOI
Exchange bias in nanostructures
Josep Nogués,Jordi Sort,V. Langlais,Vassil Skumryev,Santiago Suriñach,J.S. Muñoz,Maria Dolors Baró +6 more
TL;DR: The phenomenology of exchange bias and related effects in nanostructures is reviewed in this paper, where the main applications of exchange biased nanostructure are summarized and the implications of the nanometer dimensions on some of the existing exchange bias theories are briefly discussed.
Journal Article
Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe 3 GeTe 2
Yujun Deng,Yijun Yu,Yichen Song,Jingzhao Zhang,Naizhou Wang,Zeyuan Sun,Yangfan Yi,Yizheng Wu,Shiwei Wu,Junyi Zhu,Jing Wang,Xianhui Chen,Yuanbo Zhang +12 more
TL;DR: In this paper, it was shown that the itinerant ferromagnetic order persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy.
Journal ArticleDOI
Ordered magnetic nanostructures: fabrication and properties
TL;DR: The fabrication methods and physical properties of ordered magnetic nanostructures with dimensions on the submicron to nanometer scale are reviewed in this article, where various types of nanofabrication techniques are described, and their capabilities and limitations in achieving magnetic nano-structures are discussed.
Proceedings ArticleDOI
DFTL: a flash translation layer employing demand-based selective caching of page-level address mappings
TL;DR: This work proposes a complete paradigm shift in the design of the core FTL engine from the existing techniques with a Demand-based Flash Translation Layer (DFTL), which selectively caches page-level address mappings and develops a flash simulation framework called FlashSim.
Journal ArticleDOI
Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe$_3$GeTe$_2$
Yujun Deng,Yijun Yu,Yichen Song,Jingzhao Zhang,Naizhou Wang,Yizheng Wu,Junyi Zhu,Jing Wang,Xianhui Chen,Yuanbo Zhang +9 more
TL;DR: In this article, it was shown that the itinerant ferromagnetic order persists in Fe$_3$GeTe$_2$ down to monolayer with an out-of-plane magnetocrystalline anisotropy.
References
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Oscillatory magnetic exchange coupling through thin copper layers
TL;DR: It is shown that Co slabs are indirectly exchanged coupled via thin Cu layers with a coupling that alternates back and forth between antiferromagnetic and ferromagnetic superlattices, confirming theoretical predictions more than 25 years old.
Journal ArticleDOI
Microstructured magnetic tunnel junctions (invited)
William J. Gallagher,Stuart S. P. Parkin,Yu Lu,X. P. Bian,A. C. Marley,Kevin P. Roche,R. A. Altman,S. A. Rishton,C. Jahnes,T. M. Shaw,Gang Xiao +10 more
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Journal ArticleDOI
High density submicron magnetoresistive random access memory (invited)
Saied N. Tehrani,Eugene Youjun Chen,M. Durlam,M. DeHerrera,Jon M. Slaughter,Jing Shi,Gloria Kerszykowski +6 more
TL;DR: In this paper, a memory element based on pseudo-spin valve structures was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer, which results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions.