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Properties of group III nitrides
James H. Edgar,Inspec +1 more
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TLDR
In this paper, the basic physical properties phase diagrams electrical properties band structure optical functions infra-red absorption and impurity energy levels photoluminescence and cathodoluminecence Raman and reflection spectra interfaces including heterojunctions.Abstract:
Basic physical properties phase diagrams electrical properties band structure optical functions infra-red absorption and impurity energy levels photoluminescence and cathodoluminescence Raman and reflection spectra interfaces including heterojunctions.read more
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
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An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
TL;DR: An AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED, represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.