Journal ArticleDOI
RAPS: an innovative active pixel for particle detection integrated in CMOS technology
Daniele Passeri,Pisana Placidi,Leonardo Verducci,Paolo Ciampolini,Guido Matrella,Alessandro Marras,Gian Mario Bilei +6 more
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In this article, the authors discuss some design, implementation and test issues with respect to the development of the RAPS01 chip in the framework of the Radiation Active Pixel Sensors (RAPS) INFN project.Abstract:
In this paper we discuss some design, implementation and test issues, with respect to the development of the RAPS01 chip in the framework of the Radiation Active Pixel Sensors (RAPS) INFN project. The project aimed at verifying feasibility of smart, high-resolution pixel arrays with a fully standard, submicron CMOS technology for particle detection purposes. Layout optimization of the pixel, including sensitive element and local read and amplification circuits has been carried out. Different basic pixel schemes and read-out options have been proposed and devised. Chip fabrication has been completed and test phase is now under way: to this purpose a suitable test environment has been devised and test strategies have been planned.read more
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Journal ArticleDOI
Monolithic pixel detectors in a 0.13 μm CMOS technology with sensor level continuous time charge amplification and shaping
Lodovico Ratti,Massimo Manghisoni,Valerio Re,V. Speziali,Gianluca Traversi,S. Bettarini,G. Calderini,R. Cenci,Marcello Giorgi,F. Forti,Fabio Morsani,G. Rizzo +11 more
TL;DR: In this article, the feasibility of a new implementation of CMOS monolithic active pixel sensors (MAPS) for applications to charged particle tracking is studied. But the authors focus on the front-end of the front end of the system, which relies upon a charge sensitive amplifier (CSA), embedded in the elementary pixel cell.
Journal ArticleDOI
A novel monolithic active pixel detector in triple well CMOS technology with pixel level analog processing
G. Rizzo,S. Bettarini,G. Calderini,R. Cenci,F. Forti,Mario Giorgi,Fabio Morsani,Lodovico Ratti,V. Speziali,Massimo Manghisoni,Valerio Re,Gianluca Traversi,L. Bosisio +12 more
TL;DR: In this article, a monolithic active pixel sensor (MAPS) was designed and fabricated in STMicrolectronics 0.13 µm CMOS technology, exploiting the triple well option to implement, at the pixel level, a more complex signal processor and to increase the size of the charge collecting electrode with respect to previously developed CMOS MAPS.
Journal ArticleDOI
Use of a CMOS Image Sensor for an Active Personal Dosimeter in Interventional Radiology
E. Conti,Pisana Placidi,Maurizio Biasini,L. Bissi,Andrea Calandra,Bruno Checcucci,Stefania Chiocchini,R. Cicioni,Roberto Di Lorenzo,A.C. Dipilato,Alessandro Esposito,M. Paolucci,Daniele Passeri,A. Pentiricci,Andrea Scorzoni,Leonello Servoli +15 more
TL;DR: The authors present a novel approach to perform online monitoring of the staff during their interventions by using a device based on an Active Pixel Sensor, marking a distinct improvement with respect to commercial Active Personal Dosimeters.
Proceedings ArticleDOI
Development of deep N-well MAPS in a 130 nm CMOS technology and beam test results on a 4k-pixel matrix with digital sparsified readout
G. Rizzo,C. Avanzini,G. Batignani,S. Bettarini,Filippo Bosi,G. Calderini,M. Ceccanti,R. Cenci,Alberto Cervelli,Francesco Crescioli,Mauro Dell'Orso,F. Forti,Paola Giannetti,Mario Giorgi,A. Lusiani,S. Gregucci,P. Mammini,G. Marchiori,M. Massa,Fabio Morsani,Nicola Neri,E. Paoloni,M. Piendibene,L. Sartori,J. J. Walsh,Eugene Yurtsev,Massimo Manghisoni,Valerio Re,Gianluca Traversi,Marco Bruschi,R. Di Sipio,B. Giacobbe,Alessandro Gabrielli,F. Giorgi,Giulio Pellegrini,Carla Sbarra,N. Semprini,R. Spighi,Sara Valentinetti,Mauro Villa,Antonio Zoccoli,C. Andreoli,Luigi Gaioni,E. Pozzati,Lodovico Ratti,V. Speziali,D. Gamba,G. Giraudo,P. Mereu,G.-F. Dalla Betta,Giovanni Soncini,G. Fontana,M. Bomben,L. Bosisio,P. Cristaudo,G. Giacomini,D. Jugovaz,L. Lanceri,Irina Rashevskaya,L. Vitale,G. Venier +60 more
TL;DR: In order to fully exploit the readout capabilities of the MAPS, a dedicated fast readout architecture performing on-chip data sparsification and providing the timing information for the hits has been implemented in the prototype chip “APSEL4D”, having 4096 pixels.
Journal ArticleDOI
Continuous Time-Charge Amplification and Shaping in CMOS Monolithic Sensors for Particle Tracking
TL;DR: In this article, the use of continuous time charge amplification and shaping is proposed for processing the signal delivered by CMOS pixel sensors in charged particle tracking applications, which aims at exploiting the large scale of integration of modern deep submicron CMOS technologies to incorporate into the design of a single device both the potential for thin detector fabrication, inherent in the concept of monolithic active pixel sensors (MAPS), and the data sparsification capabilities featured by hybrid pixels.
References
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Journal ArticleDOI
A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology
Renato Turchetta,J.D. Berst,B. Casadei,Gilles Claus,C. Colledani,W. Dulinski,Yann Hu,D. Husson,J. P. Le Normand,J.L. Riester,Grzegorz Deptuch,Ulrich Goerlach,S. Higueret,Marc Winter +13 more
TL;DR: In this article, a novel active pixel sensor (MAPS) for charged particle tracking made in a standard CMOS technology is proposed, which has a special structure, which allows the high detection efficiency required for tracking applications.
Journal ArticleDOI
Device simulations of silicon detectors: a design perspective
Daniele Passeri,Pisana Placidi,Leonardo Verducci,Francesco Moscatelli,Paolo Ciampolini,Guaido Matrella,Alessandro Marras,Gian Mario Bilei +7 more
TL;DR: In this paper, a couple of significant applications of device simulation to the investigation and design of advanced solid-state radiation sensors are presented, namely, radiation damage influence on detectors operating at cryogenic temperatures and features of an innovative scheme for CMOS active pixel sensors.