Journal ArticleDOI
Resist line edge roughness and aerial image contrast
TLDR
In this paper, the authors report the results of an experimental study of the correlations between line edge roughness and aerial image contrast for different lithographies in identical processing conditions, using atomic force microscopy carbon nanotube tips to image the top and bottom of trenches with very high resolution.Abstract:
We report the results of an experimental study of the correlations between line edge roughness (LER) and aerial image contrast for different lithographies in identical processing conditions. The characterization has been performed using atomic force microscopy carbon nanotube tips to image the top and bottom of trenches with very high resolution. Experimental results generally support that higher aerial image contrast leads to lower line edge roughness, but differences exist among the lithographies and resists. Top surface roughness results show similar trends with LER. Higher aerial image modulation also yields higher resist sidewall angle.read more
Citations
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Journal ArticleDOI
Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art.
A E Grigorescu,Cornelis W. Hagen +1 more
TL;DR: An overview of the best resolution obtained with several types of both organic and inorganic resists, including hydrogen silsesquioxane (HSQ), which is a relatively new e-beam resist that is very suitable when aiming for sub-20-nm resolution.
Journal ArticleDOI
Radiation Chemistry in Chemically Amplified Resists
Takahiro Kozawa,Seiichi Tagawa +1 more
TL;DR: In this article, the authors review the radiation chemistry of materials related to chemically amplified resist materials and discuss the imaging mechanisms from energy deposition to proton migration in resist materials are discussed.
Journal ArticleDOI
Molecular Glass Resists for High-Resolution Patterning
Junyan Dai,Seung Wook Chang,Alyssandrea H. Hamad,Da Yang,and Nelson Felix,Christopher K. Ober +5 more
TL;DR: In this paper, a series of photoresists constructed from glass-forming, low-molecular-weight organic compounds, also known as molecular glasses, were designed and synthesized for study in advanced lithography.
Journal ArticleDOI
Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes
Dario L. Goldfarb,Arpan P. Mahorowala,Gregg M. Gallatin,Karen Petrillo,Karen Temple,Marie Angelopoulos,Stacy Rasgon,Herbert H. Sawin,Scott D. Allen,Margaret C. Lawson,Ranee W. Kwong +10 more
TL;DR: In this paper, an atomic force microscopy is used to investigate the contribution of the imaging resist sidewall topography to the sidewall roughness of the final etched feature in thin photoresists, ARC and hardmasks.
Journal ArticleDOI
A review of line edge roughness and surface nanotexture resulting from patterning processes
TL;DR: The importance of surface and sidewall roughness in nanotechnology is discussed and a roughness study framework is presented in this article, which is based on the interaction triangle: application, characterization and material processing.
References
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Journal ArticleDOI
Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography
TL;DR: In this article, the authors measured the sidewall roughness of a positive-tone, chemically amplified resist, Shipley APEX-E exposed by X-ray radiation and found that the overall roughness for fully developed nested lines, under normal processing conditions, is on the order of 4.3 nm root-mean-square (rms) and shows no dose dependence.
Journal ArticleDOI
Process dependence of roughness in a positive-tone chemically amplified resist
D. He,F. Cerrina +1 more
TL;DR: In this article, the relationship between roughness and deprotection in the case of a positive chemically amplified resist was explored and the correlation between sidewall and top surface roughness was also discussed.
Journal ArticleDOI
Surface roughness development during photoresist dissolution
TL;DR: In this article, the development of photoresist has been simulated through application of the critical-ionization model to a three-dimensional molecular lattice representation of the polymer matrix, and the model was adapted to describe chemically amplified photoresists of the sort now commonly used in microlithography.
Proceedings ArticleDOI
Aerial image contrast using interferometric lithography: effect on line-edge roughness
Martha I. Sanchez,William D. Hinsberg,Frances A. Houle,John A. Hoffnagle,Hiroshi Ito,Cattien V. Nguyen +5 more
TL;DR: In this article, the authors used a deep-UV interferometric lithography exposure tool to study the impact of aerial image contrast on resists imaging properties, including positive and negative tone systems, chemically amplified and conventional diazonaphthoquinone imagining chemistries, and aqueous and solvent-developed systems.