Journal ArticleDOI
Review and perspective on ferroelectric HfO2-based thin films for memory applications
TLDR
In this article, the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material's point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.Abstract:
The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011 They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussedread more
Citations
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Journal ArticleDOI
Enhanced ferroelectricity in ultrathin films grown directly on silicon.
Suraj Cheema,Daewoong Kwon,Daewoong Kwon,Nirmaan Shanker,Roberto dos Reis,Shang-Lin Hsu,Shang-Lin Hsu,Jun Xiao,Haigang Zhang,Ryan Wagner,Adhiraj Datar,Margaret McCarter,Claudy Serrao,Ajay K. Yadav,Golnaz Karbasian,Cheng-Hsiang Hsu,Ava J. Tan,Li Chen Wang,Vishal Thakare,Xiang Zhang,Apurva Mehta,Evguenia Karapetrova,Rajesh V. Chopdekar,Padraic Shafer,Elke Arenholz,Elke Arenholz,Chenming Hu,Roger Proksch,Ramamoorthy Ramesh,Jim Ciston,Sayeef Salahuddin,Sayeef Salahuddin +31 more
TL;DR: This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems—that is, from perovskite-derived complex oxides to fluorite-structure binary oxides—in which ‘reverse’ size effects counterintuitively stabilize polar symmetry in the ultrathin regime.
Journal ArticleDOI
Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier
Zheng Wen,Zheng Wen,Di Wu +2 more
TL;DR: Recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier, and electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectrode interfaces are discussed with the enhancement of memory performance.
Journal ArticleDOI
Defects and Aliovalent Doping Engineering in Electroceramics.
TL;DR: The types of defects in electroceramics as well as characterization tools of defects are summarized and the effects of intrinsic and extrinsic defects on the material performances with the emphasis on dielectric, ferroelectric, and piezoelectric properties are highlighted.
Journal ArticleDOI
Nanomaterials: Applications, waste-handling, environmental toxicities, and future challenges – A review
Shaukat Ali Mazari,Esfandyar Ali,Rashid Abro,Fahad Saleem Ahmed Khan,Israr Ahmed,Mushtaq Ahmed,Sabzoi Nizamuddin,Tahir Hussain Siddiqui,Nazia Hossain,Nabisab Mujawar Mubarak,Asif Shah +10 more
TL;DR: In this paper, a critical analysis of the present phase of knowledge concerning the exposure and effects of nanomaterials has been discussed in-depth, including the potential benefits and unknown dangers.
Journal ArticleDOI
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Saúl Estandía,Nico Dix,Jaume Gazquez,Ignasi Fina,Jike Lyu,Matthew F. Chisholm,Josep Fontcuberta,Florencio Sánchez +7 more
TL;DR: The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia was proved in this article, where the critical impact on the stability of the phase was investigated.
References
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Book
Principles and Applications of Ferroelectrics and Related Materials
TL;DR: In this paper, the theory of ferroelectricity in terms of soft modes and lattice dynamics is developed and modern techniques of measurement, including X-ray, optic, and neutron scattering, infra-red absorption, and magnetic resonance.
Journal ArticleDOI
Ferroelectric thin films: Review of materials, properties, and applications
Nava Setter,Dragan Damjanovic,L. Eng,Glen R. Fox,Spartak Gevorgian,Seungbum Hong,Angus I. Kingon,Hermann Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,Tomoaki Yamada,Stephen K. Streiffer +14 more
TL;DR: An overview of the state of the art in ferroelectric thin films is presented in this paper, where the authors review applications: micro-systems' applications, applications in high frequency electronics, and memories based on Ferroelectric materials.
Journal ArticleDOI
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
Journal ArticleDOI
Critical thickness for ferroelectricity in perovskite ultrathin films
Javier Junquera,Philippe Ghosez +1 more
TL;DR: It is shown that, contrary to current thought, BaTiO3 thin films between two metallic SrRuO3 electrodes in short circuit lose their ferro electric properties below a critical thickness of about six unit cells, suggesting the existence of a lower limit for the thickness of useful ferroelectric layers in electronic devices.
Journal ArticleDOI
Ferroelectricity in ultrathin perovskite films.
Dillon D. Fong,G. Brian Stephenson,Stephen K. Streiffer,Jeffrey A. Eastman,Orlando Auciello,Paul H. Fuoss,Carol Thompson +6 more
TL;DR: In this paper, a synchrotron x-ray study of lead titanate as a function of temperature and film thickness for films as thin as a single unit cell was performed.