Journal ArticleDOI
Role of high-k gate insulators for oxide thin film transistors
TLDR
In this paper, the role of gate insulators in oxide thin-film transistors has been investigated and the results show that ZrO2 is more suitable than HfO2 for the gate-dielectric material which can be fabricated at room temperature.About:
This article is published in Thin Solid Films.The article was published on 2010-03-31. It has received 90 citations till now. The article focuses on the topics: Gate oxide & Oxide thin-film transistor.read more
Citations
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors
TL;DR: In this paper, the role of high-κ dielectrics in device performance was systematically studied and a simple and environmentally friendly spin-coating method was developed for highκ Dielectrics (AlOx, ZrOx, YOx and TiOx).
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Review of gallium oxide based field-effect transistors and Schottky barrier diodes
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Mobility Enhancement in Solution‐Processed Transparent Conductive Oxide TFTs due to Electron Donation from Traps in High‐k Gate Dielectrics
Andre Zeumault,Vivek Subramanian +1 more
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Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C
TL;DR: In this article, solution processed low voltage (<3 V) zinc oxide (ZnO) thin-film transistors with the maximum process temperature not exceeding 150 °C were achieved.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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ZnO-based transparent thin-film transistors
TL;DR: In this article, the authors proposed a transparent ZnO-based thin-film transistors (TFTs) for select-transistors in each pixel of an active-matrix liquid-crystal display.
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Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
TL;DR: The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated in this paper, where the authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IZO (channel).
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Oxide Electronics Emerge
TL;DR: In this paper, the authors describe the properties of a class of materials whose electrons interact strongly and can exhibit properties as a group that are not seen in any one particle, and describe how these properties can be exploited in microelectronics.
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Oxygen vacancies in high-k oxides
TL;DR: In this paper, the authors investigate how these are related to the oxygen vacancies in a series of ab-initio calculations and find that the O vacancy contributes to the Fermi level pinning effect, which limits the band edge work functions.