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Proceedings ArticleDOI

Scalable modeling of Through Silicon Vias up to milimeter-wave frequency

TLDR
In this paper, measurements are made to validate the electrical performance of a Through Silicon Via (TSV) interconnection up to 40GHz, and the results of the wideband scalable model of TSV is proposed and compared with the measured data.
Abstract
In this study, measurements are made to validate the electrical performance of a Through Silicon Via (TSV) interconnection up to 40GHz, and the results of the wideband scalable model of TSV is proposed and compared with the measured data. Measurement of the TSV structure demonstrates its advantages of low parasitic capacitance and low insertion loss at high frequency.

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Citations
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Proceedings ArticleDOI

Performance and process characteristic of glass interposer with through-glass-via(TGV)

TL;DR: Glass is proposed as ideal interposer material due to high resistivity, low dielectric constant, low insertion loss and adjustable coefficient of thermal expansion (CTE) for the 3DIC assembly integration and most importantly low cost solution, [1-4].
Proceedings ArticleDOI

Wideband and scalable equivalent-circuit model for differential through silicon vias with measurement verification

TL;DR: In this article, a scalable physical model for differential TSVs has been proposed, and the mixed-mode S-parameters were generated from the established model to compare electrical performance between a GSSG-and GSGSG-type differential TSV.
Proceedings ArticleDOI

Scalable Modeling and Measurement of TSV Applied for Efficiency Improvement of a RF PA

TL;DR: In this paper, a high efficient CMOS class-E power amplifier (PA) by using Quad Flat No-leads (QFN) package combined with Through Silicon Via (TSV) grounding is presented.
References
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Journal ArticleDOI

Cramming More Components Onto Integrated Circuits

TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI

High-Frequency Scalable Electrical Model and Analysis of a Through Silicon Via (TSV)

TL;DR: In this article, the authors proposed a high-frequency scalable electrical model of a through silicon via (TSV) channel, which includes not only the TSV, but also the bump and the redistribution layer (RDL), which are additional components when using TSVs for 3D integrated circuit (IC) design.
Journal ArticleDOI

High-speed VLSI interconnect modeling based on S-parameter measurements

TL;DR: In this paper, a first-level-metal single-conductor IC interconnect model is developed for high-speed and high-density VLSI circuit design, which includes effects such as capacitive fringing and the influence of substrate conductance.
Journal ArticleDOI

Two-port network analyzer calibration using an unknown 'thru'

TL;DR: A procedure performed by using a genuine two-port reciprocal network instead of a standard 'thru' in a full two- port error correction of an automatic network analyzer is presented and provides a great degree of accuracy.
Proceedings ArticleDOI

An SOLR calibration for accurate measurement of orthogonal on-wafer DUTs

TL;DR: In this paper, the Short-Open-Load-Reciprocal THROW (SOLR) approach, which avoids imposing any dependency on the nature of the thru standard itself, provides a superior calibration.
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