Journal ArticleDOI
SCALPEL mask-membrane charging
Masis Mkrtchyan,A. S. Gasparyan,K. A. Mkhoyan,Alexander Liddle,Anthony E. Novembre,David A. Muller +5 more
TLDR
In this article, the authors investigated the electric charge generation and accumulation in a:SiN"x thin films irradiated by energetic (100 keV) electrons and formulated kinetic equations describing the dynamic process.About:
This article is published in Microelectronic Engineering.The article was published on 1999-05-01. It has received 7 citations till now. The article focuses on the topics: Secondary electrons & Electric charge.read more
Citations
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Journal ArticleDOI
High-performance membrane mask for electron projection lithography
TL;DR: In this paper, a high-performance membrane mask for electron projection lithography (EPL) systems is proposed, which consists of a 600-nm-thick diamond-like carbon (DLC) scatter on a DLC membrane 30-60 nm thick.
Journal ArticleDOI
Calculation of surface potential and beam deflection due to charging effects in electron beam lithography
TL;DR: In this paper, the analysis procedures of charging effects and calculation results of surface potential and beam deflection in electron beam lithography were described and Monte Carlo simulation was performed to obtain the charge distribution in e beam resist.
Journal ArticleDOI
Electron Scattering and Related Phenomena in Scattering with Angular Limitation Projection Electron Lithography (SCALPEL).
TL;DR: In this article, various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are responsible for the aerial image formation in SCALPEL.
Journal ArticleDOI
Determination of the possible magnitude of the charging effect in a SCALPEL mask membrane
TL;DR: In this paper, the authors investigated the charging of free standing dielectric thin films irradiated by 100 keV electrons and formulated kinetic equations describing the dynamic process, which is applicable to the case of a SiNx membrane with a top surface conductive layer.
Journal ArticleDOI
Mask-membrane impact on image blur in SCALPEL
Masis Mkrtchyan,Gregg M. Gallatin,Alexander Liddle,Xeiqing Zhu,Eric Munro,Warren K. Waskiewicz,David A. Muller +6 more
TL;DR: In this article, the electron energy loss spectra (EELS) is described by an analytical function of the membrane thickness and the material characteristics, and a straightforward procedure using the analytical approximation of EELS and the results obtained from it for the SCALPEL mask-membrane in terms of chromatic aberration evaluation and control are presented.
References
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Book
Electron Energy-Loss Spectroscopy in the Electron Microscope
Ray F. Egerton,Dale E. Newbury +1 more
TL;DR: In this article, the authors present an overview of the basic principles of energy-loss spectroscopy, including the use of the Wien filter, and the analysis of the inner-shell of the detector.
Book
Scanning Electron Microscopy: Physics of Image Formation and Microanalysis
TL;DR: In this article, the authors describe the physics of a scanning electron microscope, including: Electron Optics of a Scanning Electron Microscope., Electron Scattering and Diffusion, Emission of Backscattered and Secondary Electrons, Electron Detectors and Spectrometers, Image Contrast and Signal Processing, and Electron-Beam Induced Current and Cathodoluminescence.
Book
Transmission Electron Microscopy: Physics of Image Formation and Microanalysis
TL;DR: In this article, the theory of image and contrast formation, and the analytical modes in transmission electron microscopy are described, and a brief discussion of Schottky emission guns, some clarification of minor details, and references to the recent literature are provided.
Journal ArticleDOI
Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
P. C. Arnett,B. H. Yun +1 more
TL;DR: In this paper, results of charge−centroid measurements on thin-oxide MNOS devices are interpreted with a charge trapping model, leading to values for the nitride trap density, capture cross section, and average trapping distance of 6×1018/cm3, 5×10−13 cm2, and 35 A, respectively.
Journal ArticleDOI
Dangling Bonds in Memory‐Quality Silicon Nitride Films
Shizuo Fujita,Akio Sasaki +1 more
TL;DR: In this paper, the authors investigated the origin of memory traps in chemically vapordeposited silicon nitride films and revealed the existence of silicon dangling bonds which have three-folded configuration.