Journal ArticleDOI
Self-polarization effect in Pb(Zr,Ti)O3 thin films
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TLDR
In this paper, the self-polarization effect of Pb(Zr,Ti)O3 (PZT) thin films deposited by sol-gel and magnetron sputtering techniques was investigated.Abstract:
The self-polarization effect is investigated in Pb(Zr,Ti)O3 (PZT) thin films deposited by sol-gel and magnetron sputtering techniques. The effective piezoelectric coefficient of as-grown films, which is proportional to their initial polarization (self-polarization), is measured by a sensitive interferometric technique as a function of the annealing temperature, PZT composition, film thickness and bottom electrode material. The results indicate that the films are self-polarized by an internal bias field upon cooling through the phase transition temperature. It is suggested that a built-in field of a Schottky barrier between the PZT film and the bottom electrode is responsible for the observed effect. Self-polarization of the films is found to be very stable and in some cases to be as high as 90% of that produced by the subsequent room temperature poling. This property is very useful for piezoelectric and pyroelectric applications of PZT films since the poling procedure can be avoided. The properti...read more
Citations
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Journal ArticleDOI
Interface-induced phenomena in polarization response of ferroelectric thin films
Alexander K. Tagantsev,G. Gerra +1 more
TL;DR: In this paper, the authors reviewed the existing theoretical models describing the interface-induced phenomena which affect the switching characteristics and dielectric properties of ferroelectric thin-film capacitors.
Journal ArticleDOI
Flexoelectricity of barium titanate
Wenhui Ma,L. Eric Cross +1 more
TL;DR: In this paper, the flexoelectric coefficient of barium titanate was measured dynamically at small level of strain gradients, and the coupling effect between mechanical strain gradient and electric polarization was found to be nonlinearly enhanced by high dielectric permittivity and domain contribution.
Journal ArticleDOI
Electromechanical Imaging and Spectroscopy of Ferroelectric and Piezoelectric Materials: State of the Art and Prospects for the Future
TL;DR: In this paper, the authors summarize the fundamentals and recent advances in PFM, and describe the nanoscale electromechanical properties of several important ferroelectric ceramic materials widely used in memory and microelectromechanical systems applications.
Journal ArticleDOI
Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy
TL;DR: In this paper, the authors used scanning force microscopy (SFM) to perform nanoscale studies of the switching behavior of Pb(Zr, Ti)O3 thin films via the direct observation of their domain structures.
Journal ArticleDOI
Flexoelectric effect in the reversal of self-polarization and associated changes in the electronic functional properties of BiFeO(3) thin films.
Byung-Chul Jeon,Daesu Lee,Myang Hwan Lee,Sang Mo Yang,Seung Chul Chae,Tae Kwon Song,Sang Don Bu,Jin-Seok Chung,Jong-Gul Yoon,Tae Won Noh +9 more
TL;DR: Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films.
References
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Journal ArticleDOI
Interferometric measurements of electric field-induced displacements in piezoelectric thin films
TL;DR: In this article, a double-beam interferometer was proposed to suppress the bending effect of the substrate bending motion in piezoelectric thin-film measurements, which was shown to resolve small displacements without using lock-in technique.
Journal ArticleDOI
Piezoelectric properties of c-axis oriented pb(zr,ti)o3 thin films
TL;DR: In this article, the c-axis oriented Pb(Zr,Ti)O3 (PZT) thin films were investigated and the results revealed that the PZT films exhibited excellent ferroelectricity with a remanent polarization more than 50 μC/cm2.