Journal ArticleDOI
Small-Diameter Silicon Nanowire Surfaces
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TLDR
These hydrogen-terminated SiNW surfaces seem to be more oxidation-resistant than regular silicon wafer surfaces, because atomically resolved STM images of SiNWs were obtained in air after several days' exposure to the ambient environment.Abstract:
Small-diameter (1 to 7 nanometers) silicon nanowires (SiNWs) were prepared, and their surfaces were removed of oxide and terminated with hydrogen by a hydrofluoric acid dip. Scanning tunneling microscopy (STM) of these SiNWs, performed both in air and in ultrahigh vacuum, revealed atomically resolved images that can be interpreted as hydrogen-terminated Si (111)-(1 × 1) and Si (001)-(1 × 1) surfaces corresponding to SiH 3 on Si (111) and SiH 2 on Si (001), respectively. These hydrogen-terminated SiNW surfaces seem to be more oxidation-resistant than regular silicon wafer surfaces, because atomically resolved STM images of SiNWs were obtained in air after several days9 exposure to the ambient environment. Scanning tunneling spectroscopy measurements were performed on the oxide-removed SiNWs and were used to evaluate the electronic energy gaps. The energy gaps were found to increase with decreasing SiNW diameter from 1.1 electron volts for 7 nanometers to 3.5 electron volts for 1.3 nanometers, in agreement with previous theoretical predictions.read more
Citations
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Investigation on the reflectance properties on silicon nanowires grown by electroless etching
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Atomistic simulations of the tensile and melting behavior of silicon nanowires
TL;DR: In this article, the tensile and melting behavior of single-crystalline silicon nanowires (SiNWs) were investigated using molecular dynamics simulations with Stillinger-Weber potential.
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Cubic lattice nanosheets: Thickness-driven light emission
TL;DR: The group led by Heon-Jin Choi demonstrates the gas-phase dendritic growth of Si nanosheets, only 1 to 13 nm thick, which display strong thickness-dependent photoluminescence in a visible range with red, green, and blue emission each documented.
Journal ArticleDOI
Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires
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TL;DR: In this article, using ultrafast optical-pump and terahertz-probe spectroscopy, the Auger scattering significantly reduces the trap-mediated decay process of nanowires.
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