Patent
Method for manufacturing a semiconductor substrate
Masaki Matsui,Shoichi Yamauchi,Hisayoshi Ohshima,Kunihiro Onoda,Akiyoshi Asai,Takanari Sasaya,Takeshi Enya,Jun Sakakibara +7 more
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TLDR
In this article, the authors proposed a method for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layers on a substrate on which a buried pattern structure has been formed, it is possible to greatly increase the film thickness uniformity and the thickness controllability.Abstract:
Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.read more
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Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
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System comprising a semiconductor device and structure
Zvi Or-Bach,Brian Cronquist,Israel Beinglass,Jan Lodewijk de Jong,Deepak C. Sekar,Zeev Wurman +5 more
TL;DR: In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
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Semiconductor device and structure
Zvi Or-Bach,Brian Cronquist +1 more
TL;DR: In this paper, a first layer and a second layer of layer-transferred mono-crystallized silicon, where the first layer comprises a first plurality of horizontally-oriented transistors, and the second layer includes a second plurality of vertically oriented transistors.
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Method for manufacturing SOI substrate
TL;DR: In this paper, an SOI substrate in bonding a semiconductor substrate and a base substrate to each other was used to improve the bonding strength and reliability of SOI substrates, even when an insulating film containing nitrogen was used as a bonding layer.
References
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Journal ArticleDOI
Silicon on insulator material technology
TL;DR: In this article, a silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen.
Patent
Smart-cut process for the production of thin semiconductor material films
TL;DR: In this article, an etch stop layer was used to improve the smoothness and uniformity of the device layer in the fabricated silicon on insulator (SOI) substrate.
Journal ArticleDOI
Smart-Cut: A New Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding*1
TL;DR: The Smart-Cut process as discussed by the authors involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer.
Patent
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
TL;DR: In this paper, a super-junction semiconductor device with a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state is described.