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Journal ArticleDOI

Spin routes in organic semiconductors

V. Alek Dediu, +3 more
- 01 Sep 2009 - 
- Vol. 8, Iss: 9, pp 707-716
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TLDR
The main experimental results and their connections with devices such as light-emitting diodes and electronic memory devices are summarized, and the scientific and technological issues that make organic spintronics a young but exciting field are outlined.
Abstract
Organic semiconductors are characterized by a very low spin–orbit interaction, which, together with their chemical flexibility and relatively low production costs, makes them an ideal materials system for spintronics applications. The first experiments on spin injection and transport occurred only a few years ago, and since then considerable progress has been made in improving performance as well as in understanding the mechanisms affecting spin-related phenomena. Nevertheless, several challenges remain in both device performance and fundamental understanding before organic semiconductors can compete with inorganic semiconductors or metals in the development of realistic spintronics applications. In this article we summarize the main experimental results and their connections with devices such as light-emitting diodes and electronic memory devices, and we outline the scientific and technological issues that make organic spintronics a young but exciting field.

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Citations
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Singlet-to-triplet interconversion using hyperfine as well as ferromagnetic fringe fields

TL;DR: It is shown that spatially rapidly varying local magnetic fields that may be present in the organic layer dramatically affect electronic transport properties and electroluminescence efficiency, and a model based on fringe-field-induced polaron-pair spin-dynamics that successfully describes several key features of the experimental fringe- field magnetoresistance and magnetoelectrolominescence is reviewed.
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Molecular spinterface in F<sub>4</sub>TCNQ-doped polymer spin valves

TL;DR: In this paper , an anionic radical through the charge transfer process of hybridization on the spinterface was found in a doped P3HT spin valve, which may effectively enhance the device performance.
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Anomalous migration of polarons in disordered organic semiconductors and its manifestation in magnetic-field effects

TL;DR: In this article, it was shown that anomalous (dispersive) migration, which is described in the CTRW model by a heavy-tailed hop waiting time distribution ψ(t)∼t -(1+α), clearly manifests itself in the magnetic field dependence of the PP-recombination yield and, hence, the conductivity.
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Super-Resolution Photothermal Patterning in Conductive Polymers Enabled by Thermally Activated Solubility

TL;DR: In this article, the authors use diffraction to spatially modulate the light intensity and determine the dissolution rate, revealing a superlinear dependence on light intensity, which is not dominated by an optical dedoping reaction, as was previously proposed.
References
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Journal ArticleDOI

Organic Electroluminescent Diodes

TL;DR: In this article, a double-layer structure of organic thin films was prepared by vapor deposition, and efficient injection of holes and electrons was provided from an indium-tinoxide anode and an alloyed Mg:Ag cathode.
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Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Journal ArticleDOI

Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices.

TL;DR: This work ascribes this giant magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy to spin-dependent transmission of the conduction electrons between Fe layers through Cr layers.
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Electroluminescence in conjugated polymers

TL;DR: Research in the use of organic polymers as active semiconductors in light-emitting diodes has advanced rapidly, and prototype devices now meet realistic specifications for applications.
Journal ArticleDOI

Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange

TL;DR: The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel, much stronger than the usual anisotropic magnetoresistance.
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