Journal ArticleDOI
Study on leakage current of pn diode on GaN substrate at reverse bias
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In this article, the leakage current of a pn diode on a GaN substrate isolated by a mesa structure at a reverse bias was studied on a surface of the mesa sidewall across the pn junction.Abstract:
In this paper, we studied on a leakage current of a pn diode on a GaN substrate isolated by a mesa structure at a reverse bias. The leakage current flowed at a surface of the mesa sidewall across the pn junction. Results of scanning capacitance microscopy and scanning spread resistance microscopy indicated that the surface of the mesa sidewall in the p type region changed to a depleted or a n--layer. Results of auger electron spectroscopy indicated that a concentration of nitrogen decreased near the surface of the mesa sidewall. From these results, we estimated the leakage current was caused by a change of the p type region at the surface of the mesa sidewall to the depleted or n--layer by inductively coupled plasma dry etching, which was used to form the mesa structure. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)read more
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Gallium nitride vertical power devices on foreign substrates: a review and outlook
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Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Yuhao Zhang,Min Sun,Hiu Yung Wong,Yuxuan Lin,Puneet Srivastava,Christopher Hatem,Mohamed Azize,Daniel Piedra,Lili Yu,Takamichi Sumitomo,Nelson Braga,R. V. Mickevicius,Tomas Palacios +12 more
TL;DR: In this article, an advanced edge termination technology has been developed by combining plasma treatment, tetramethylammonium hydroxide wet etching, and ion implantation to suppress the leakage along the etch sidewall.
Proceedings ArticleDOI
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Steve Stoffels,Niels Posthuma,Stefaan Decoutere,Benoit Bakeroot,Andrea Natale Tallarico,Enrico Sangiorgi,Claudio Fiegna,J. Zheng,Xiaohua Ma,Matteo Borga,Elena Fabris,Matteo Meneghini,Enrico Zanoni,Gaudenzio Meneghesso,J. Priesol,Alexander Satka +15 more
TL;DR: An in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate is presented, which proposes that a parasitic sidewall transistor is present, which is the cause for degradation in the p- GaN gate.
Journal ArticleDOI
Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation
TL;DR: In this article, a high performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with postmesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current.