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Journal ArticleDOI

Recent Advances in ZnO Materials and Devices

TLDR
Wurtzitic ZnO is a widebandgap semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films as discussed by the authors.
Abstract
Wurtzitic ZnO is a wide-bandgap (3.437 eV at 2 K) semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films. Most of these applications require only polycrystalline material; however, recent successes in producing large-area single crystals have opened up the possibility of producing blue and UV light emitters, and high-temperature, high-power transistors. The main advantages of ZnO as a light emitter are its large exciton binding energy (60 meV), and the existence of well-developed bulk and epitaxial growth processes; for electronic applications, its attractiveness lies in having high breakdown strength and high saturation velocity. Optical UV lasing, at both low and high temperatures, has already been demonstrated, although efficient electrical lasing must await the further development of good, p-type material. ZnO is also much more resistant to radiation damage than are other common semiconductor materials, such as Si, GaAs, CdS, and even GaN; thus, it should be useful for space applications.

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Citations
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Journal ArticleDOI

A comprehensive review of zno materials and devices

TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI

Fundamentals of zinc oxide as a semiconductor

TL;DR: In this article, the status of zinc oxide as a semiconductor is discussed and the role of impurities and defects in the electrical conductivity of ZnO is discussed, as well as the possible causes of unintentional n-type conductivity.
PatentDOI

Self-assembly and mineralization of peptide-amphiphile nanofibers

TL;DR: In this paper, pH-induced self-assembly of a peptide-amphiphile was used to make a nanostructured fibrous scaffold reminiscent of extracellular matrix.
Journal ArticleDOI

ZnO - nanostructures, defects, and devices

TL;DR: ZnO has received much attention over the past few years because it has a wide range of properties that depend on doping, including a range of conductivity from metallic to insulating (including n-type and p-type conductivity), high transparency, piezoelectricity, widebandgap semiconductivity, room-temperature ferromagnetism, and huge magneto-optic and chemical-sensing effects.
Journal ArticleDOI

Recent developments of zinc oxide based photocatalyst in water treatment technology: A review

TL;DR: This paper presents a critical review of recent achievements in the modification of ZnO photocatalyst for organic contaminants degradation and recommends improvements in the heterogeneous photocatalysis under UV/visible/solar illumination.
References
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Journal ArticleDOI

Hydrogen as a cause of doping in zinc oxide

TL;DR: A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor.
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Optically pumped lasing of ZnO at room temperature

TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
Journal ArticleDOI

MgxZn1−xO as a II–VI widegap semiconductor alloy

TL;DR: In this article, a wide gap II-VI semiconductor alloy, MgxZn1−xO, was proposed for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO.
Journal ArticleDOI

Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

TL;DR: In this paper, a two dimensional nucleation during the initial growth was observed by in situ reflection high energy electron diffraction, followed by a morphology transition to 3D nucleation by using molecular beam epitaxy.
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