Journal ArticleDOI
Recent Advances in ZnO Materials and Devices
TLDR
Wurtzitic ZnO is a widebandgap semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films as discussed by the authors.Abstract:
Wurtzitic ZnO is a wide-bandgap (3.437 eV at 2 K) semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films. Most of these applications require only polycrystalline material; however, recent successes in producing large-area single crystals have opened up the possibility of producing blue and UV light emitters, and high-temperature, high-power transistors. The main advantages of ZnO as a light emitter are its large exciton binding energy (60 meV), and the existence of well-developed bulk and epitaxial growth processes; for electronic applications, its attractiveness lies in having high breakdown strength and high saturation velocity. Optical UV lasing, at both low and high temperatures, has already been demonstrated, although efficient electrical lasing must await the further development of good, p-type material. ZnO is also much more resistant to radiation damage than are other common semiconductor materials, such as Si, GaAs, CdS, and even GaN; thus, it should be useful for space applications.read more
Citations
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Journal ArticleDOI
A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Fundamentals of zinc oxide as a semiconductor
TL;DR: In this article, the status of zinc oxide as a semiconductor is discussed and the role of impurities and defects in the electrical conductivity of ZnO is discussed, as well as the possible causes of unintentional n-type conductivity.
PatentDOI
Self-assembly and mineralization of peptide-amphiphile nanofibers
TL;DR: In this paper, pH-induced self-assembly of a peptide-amphiphile was used to make a nanostructured fibrous scaffold reminiscent of extracellular matrix.
Journal ArticleDOI
ZnO - nanostructures, defects, and devices
TL;DR: ZnO has received much attention over the past few years because it has a wide range of properties that depend on doping, including a range of conductivity from metallic to insulating (including n-type and p-type conductivity), high transparency, piezoelectricity, widebandgap semiconductivity, room-temperature ferromagnetism, and huge magneto-optic and chemical-sensing effects.
Journal ArticleDOI
Recent developments of zinc oxide based photocatalyst in water treatment technology: A review
TL;DR: This paper presents a critical review of recent achievements in the modification of ZnO photocatalyst for organic contaminants degradation and recommends improvements in the heterogeneous photocatalysis under UV/visible/solar illumination.
References
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Journal ArticleDOI
Hydrogen as a cause of doping in zinc oxide
Van de Walle,G Chris +1 more
TL;DR: A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor.
Journal ArticleDOI
Optically pumped lasing of ZnO at room temperature
TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
Journal ArticleDOI
MgxZn1−xO as a II–VI widegap semiconductor alloy
Akira Ohtomo,Megumi Kawasaki,Takashi Koida,K. Masubuchi,Hideomi Koinuma,Y. Sakurai,Yasuhiko Yoshida,Tadashi Yasuda,Yusaburo Segawa +8 more
TL;DR: In this article, a wide gap II-VI semiconductor alloy, MgxZn1−xO, was proposed for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO.
Journal ArticleDOI
Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
TL;DR: In this paper, a two dimensional nucleation during the initial growth was observed by in situ reflection high energy electron diffraction, followed by a morphology transition to 3D nucleation by using molecular beam epitaxy.