Journal ArticleDOI
Theoretical estimation of optical gain in Tin-incorporated group IV alloy based transistor laser
Ravi Ranjan,Mukul K. Das +1 more
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In this article, the electronic band structure and polarization dependent optical gain in a strain balanced SixGeySn1−x−y/GezSn 1−z based transistor laser with a single quantum well (QW) in the base was calculated.Abstract:
We have calculated the electronic band structure and polarization dependent optical gain in a strain balanced SixGeySn1−x−y/GezSn1−z based transistor laser (TL) with GezSn1−z single quantum well (QW) in the base. Design consideration for QW is also addressed to ensure moderate carrier and optical confinement. A significant TE mode optical gain is obtained in mid infra red region for the transition of Г valley conduction band to heavy hole valence band. Optical gain in the QW plays an important role in determining the optical characteristics of Tin (Sn) incorporated group IV material based TL.read more
Citations
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Journal ArticleDOI
Progress on germanium-tin nanoscale alloys
Jessica Doherty,Subhajit Biswas,Emmanuele Galluccio,Christopher A. Broderick,Adria Garcia-Gil,Ray Duffy,Eoin P. O'Reilly,Justin D. Holmes +7 more
TL;DR: Group IV alloys have attracted interest in the drive to create Si compatible, direct bandgap materials for implementation in complementary metal oxide semiconductor (CMOS) and beyond CMOS devices.
Journal ArticleDOI
Highly Sensitive Refractive Index Sensor Based on Four-Hole Grapefruit Microstructured Fiber with Surface Plasmon Resonance
TL;DR: In this article, a highly sensitive refractive index (RI) sensor based on four-hole grapefruit fiber with surface plasmon resonance (SPR) has been proposed and theoretically investigated.
Journal ArticleDOI
Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots
TL;DR: The third order nonlinear contribution is found to be sensitive to the incident light intensity affecting both total absorption coefficient and refractive index changes, especially for larger dot sizes.
Proceedings ArticleDOI
Emerging SiGeSn integrated-photonics technology
TL;DR: In this article, the authors give an overview of potential mid-infrared applications and device capabilities. And they propose a SiGeSn integrated-photonics technology for the 1.9 to 2.5 μm wavelength range.
Journal ArticleDOI
Control of Ge1−x−ySixSny layer lattice constant for energy band alignment in Ge1−xSnx/Ge1−x−ySixSny heterostructures
Masahiro Fukuda,Kazuhiro Watanabe,Mitsuo Sakashita,Masashi Kurosawa,Osamu Nakatsuka,Shigeaki Zaima +5 more
TL;DR: In this article, a strain-relaxed Ge0.09/Ge0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate, and enhancement of the strain relaxation was demonstrated by post-deposition annealing.
References
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TL;DR: In this article, the authors compute the band structure and shear deformation potentials of strained Si, Ge, and SiGe alloys, and fit the theoretical results to experimental data on the phonon-limited carrier mobilities in bulk Si and Ge.
Book
Physics of Photonic Devices
TL;DR: In this article, the authors present an overview of the latest developments in the field of optoelectronics, including a brief history of the invention of semiconductor lasers, the Lorentz dipole model and metal plasmas, matrix optics, surface plasma waveguides, and optical ring resonators.
Journal ArticleDOI
TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
TL;DR: In this article, a new class of Sn-containing group IV semiconductors are described, which exhibit unprecedented thermal stability, superior crystallinity and unique optical and strain properties such as adjustable bandgaps, and controllable strain states.