Theory and Application for the Scanning Tunneling Microscope
Jerry Tersoff,D. R. Hamann +1 more
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TLDR
In this article, a theory for vacuum tunneling between a real solid surface and a model probe with a locally spherical tip is presented, applicable to the recently developed "scanning tunneling microscope."Abstract:
A theory is presented for vacuum tunneling between a real solid surface and a model probe with a locally spherical tip, applicable to the recently developed "scanning tunneling microscope." Calculations for 2\ifmmode\times\else\texttimes\fi{}1 and 3\ifmmode\times\else\texttimes\fi{}1 reconstructions of Au(110) are in excellent agreement with recent experimental results, if an effective radius of curvature of 9 \AA{} is assumed for the tip.read more
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Perpendicular reading of single confined magnetic skyrmions
Dax M. Crum,Mohammed Bouhassoune,Juba Bouaziz,Benedikt Schweflinghaus,Stefan Blügel,Samir Lounis +5 more
TL;DR: A technique to detect isolated nanoskyrmions with a current perpendicular-to-plane geometry, which has immediate implications for device concepts and the physics behind such a mechanism is explored by studying the atomistic electronic structure of the magnetic quasiparticles.
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Insulators at the ultrathin limit: electronic structure studied by scanning tunnelling microscopy and scanning tunnelling spectroscopy
TL;DR: In this article, a review of the state-of-the-art results on ultrathin MgO films on Ag(001) surfaces has been presented, showing that the band gap of about 6 eV at the surface develops within the first 3 ML confirmed by local density of states (LDOS) calculations.
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A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet
Asadollah Bafekry,Asadollah Bafekry,Catherine Stampfl,Mitra Ghergherehchi,Saber Farjami Shayesteh +4 more
TL;DR: In this article, the effect of layer thickness, electrical field and strain on the electronic properties of the C 2 N nanosheet was investigated, and it was shown that increasing the thickness of C 2 n can decrease the band gap and induce semiconductor-to-metal transition.
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Chemical identification of point defects and adsorbates on a metal oxide surface by atomic force microscopy
Jeppe V. Lauritsen,Adam S. Foster,Georg H. Olesen,M. Christensen,Angelika Kühnle,Stig Helveg,Jens R. Rostrup-Nielsen,Bjerne S. Clausen,Michael Reichling,Flemming Besenbacher +9 more
TL;DR: This work successfully demonstrate how to extract detailed information about defects and the chemical identity of adsorbates on a metal oxide surface from nc-AFM images using the observation that the apex of the AFM tip can be altered to expose either a positive or negative tip termination.
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Site- and orbital-dependent charge donation and spin manipulation in electron-doped metal phthalocyanines
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