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Journal ArticleDOI

Thermoelectric properties of Bi-doped Mg2Si semiconductors

Jun-ichi Tani, +1 more
- 15 Jul 2005 - 
- Vol. 364, Iss: 1, pp 218-224
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TLDR
The thermoelectric properties of Bi-doped Mg2Si have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity ( ρ ), Seebeck coefficient (S), and thermal conductivity ( κ ) between 300 and 900 K.
Abstract
The thermoelectric properties of Bi-doped Mg2Si (Mg2Si:Bi=1:x) fabricated by spark plasma sintering process have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity ( ρ ) , Seebeck coefficient (S), and thermal conductivity ( κ ) between 300 and 900 K. Bi-doped Mg2Si samples are n-type in the measured temperature range. The electron concentration of Bi-doped Mg2Si at 300 K ranges from 1.8×1019 cm−3 for the Bi concentration x = 0.001 to 1.1×1020 cm−3 for x = 0.02 . The solubility limit of Bi in Mg2Si is estimated to be about 1.3 at% and first-principles calculation revealed that Bi atoms are expected to be primarily located at the Si sites in Mg2Si. The electrical resistivity, Seebeck coefficient, and thermal conductivity are strongly affected by the Bi concentration. The sample of x = 0.02 shows a maximum value of the figure of merit, ZT, is 0.86 at 862 K.

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Citations
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Consolidation/synthesis of materials by electric current activated/assisted sintering

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Thermal conductivity of bulk and nanowire Mg 2 Si x Sn 1-x alloys from first principles

TL;DR: In this article, the lattice thermal conductivity of thermoelectric materials, such as Mg${}_{2}$Si, Mg{}_{1\ensuremath{-kappa}$], Mg {1}$Ge{1}{2}{3}{4}, and Mg ${}_{ 2}µ$Siµ, and their alloys, were calculated for bulk and nanowires, without adjustable parameters.
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Journal ArticleDOI

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TL;DR: In this article, the effects of impurities were investigated for dopants of Sb and Ag in Mg 2 Si 1-x Ge x Solid Solution Semiconductors in the composition range 0.0≤x≤0.4.
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