Journal ArticleDOI
Thin‐Film Transistors
TLDR
In this paper, an intense search has developed for new materials and fabrication techniques that can improve the performance, lower manufacturing cost, and enable new functionality of TFTs, including organic semiconductor, metal oxides, nanowires, printing technology as well as thin-film silicon materials with new properties.Abstract:
Thin-film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that can improve the performance, lower manufacturing cost, and enable new functionality. There are now many new options – organic semiconductor (OSCs), metal oxides, nanowires, printing technology as well as thin-film silicon materials with new properties. All of the new materials have something to offer but none is entirely without technical problems.read more
Citations
More filters
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Integrated Circuits Based on Bilayer MoS2 Transistors
Han Wang,Lili Yu,Yi-Hsien Lee,Yi-Hsien Lee,Yumeng Shi,Allen Hsu,Matthew L. Chin,Lain-Jong Li,Madan Dubey,Jing Kong,Tomas Palacios +10 more
TL;DR: This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology based on the semiconducting nature of molybdenum disulfide.
Journal ArticleDOI
Organic thin-film transistors.
TL;DR: A critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations.
Journal ArticleDOI
Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
Kulbinder K. Banger,Yoshihisa Yamashita,Kiyotaka Mori,Rebecca L. Peterson,Rebecca L. Peterson,Timothy J. Leedham,J. Rickard,Henning Sirringhaus +7 more
TL;DR: The formation of amorphous metal oxide semiconducting thin-films using a ‘sol–gel on chip’ hydrolysis approach from soluble metal alkoxide precursors affords unprecedented high field-effect mobilities, reproducible and stable turn-on voltages Von≈0 V and high operational stability at maximum process temperatures as low as 230 °C.
Journal ArticleDOI
Interface Engineering for Organic Electronics
TL;DR: In this article, the strategies of utilizing surfactant-modified cathodes, hole-transporting buffer layers, and self-assembled monolayer (SAM)-modified anodes are highlighted.
References
More filters
Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Two-dimensional charge transport in self-organized, high-mobility conjugated polymers
Henning Sirringhaus,Peter J. Brown,Richard H. Friend,Martin Nielsen,Klaus Bechgaard,B.M.W. Langeveld-Voss,A. J. H. Spiering,René A. J. Janssen,E. W. Meijer,P. T. Herwig,Dago M. de Leeuw +10 more
TL;DR: In this article, the authors used thin-film, field effect transistor structures to probe the transport properties of the ordered microcrystalline domains in the conjugated polymer poly(3-hexylthiophene), P3HT.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI