Journal ArticleDOI
Tunneling through thin MOS structures: Dependence on energy (E‐κ)
J. Maserjian,G. P. Petersson +1 more
TLDR
In this article, the tunneling characteristics of Cr/SiO2/Si structures in the thickness range 23-34 A were reported and the E −κ dependence in the energy range extending 3.5 eV below the oxide conduction band was determined by the thickness dependence to be approximately of the Franz form with an effective mass ratio of 0.42.Abstract:
The tunneling characteristics of Cr/SiO2/Si structures in the thickness range 23–34 A are reported. The E‐κ dependence in the energy range extending 3.5 eV below the oxide conduction band is determined by the thickness dependence to be approximately of the Franz form with an effective mass ratio of 0.42. Tunneling into the indirect conduction band of silicon is reduced by a thickness‐independent factor which decreases approximately exponentially with the energy below the direct band edge.read more
Citations
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Journal ArticleDOI
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.
Journal ArticleDOI
Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
Kjell Jeppson,Christer Svensson +1 more
TL;DR: A detailed study of the increase of the number of surface traps in MOS structures after NBS at temperatures (25-125°C) and fields (400-700 MV/m) comparable to those used in MNOS devices is presented in this article.
Journal ArticleDOI
Mechanism of electron conduction in self-assembled alkanethiol monolayer devices
TL;DR: In this article, temperature-dependent current-voltage measurements are performed on self-assembled monolayers (SAM's) of alkanethiols to distinguish between different conduction mechanisms.
Journal ArticleDOI
Pushing the Limits
TL;DR: In this paper, the problem of exceeding the maximum thermodynamically stable concentration of dopant atoms in silicon leads to diminished performance, electron tunneling prohibits reductions in gate oxide thickness, and transistor dimensions have become so small that small changes in the exact number and distribution of the atoms can cause appreciable changes in device behavior.
Journal ArticleDOI
Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling
J. Maserjian,N. Zamani +1 more
TL;DR: In this paper, the authors show that after tunnel injection of 1017 −5×1018 electrons/cm2, the barrier undergoes significant degradation leading to enhanced tunneling conductance, with reproducible behavior observed among different samples.
References
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Journal ArticleDOI
Fowler‐Nordheim Tunneling into Thermally Grown SiO2
M. Lenzlinger,E. H. Snow +1 more
TL;DR: In this article, the relative effective mass in the forbidden energy gap was found to be about 0.4, which is lower by a factor of five to ten than the expected values, probably due to trapping effects.
Journal ArticleDOI
Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon
TL;DR: In this article, the capacitance vs voltage curve of thin oxide (30-40 A) MOS structures in strong accumulation was studied in terms of equivalent surface density of state masses, which was found to be 0·2 m 0 for the silicon valence band and 0·06m 0 for conduction band, for both 111 and 100 surfaces.
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Tunneling in MIS structures—I. Theory
TL;DR: In this paper, the authors define the d.c. currents which flow and then calculate the voltage distribution in the contact, and they show that as long as the semiconductor space charge region is of the order of the insulator thickness (∼ 50 A), considerable voltage drops across the semiconductors, and that a voltage region of low conductance is shown to exist, over which the metal Fermi level is opposite the forbidden gap.
Journal ArticleDOI
The effect of nonparabolic energy bands on tunneling through thin insulating films
TL;DR: In this paper, the authors derived the energy-momentum relation in the forbidden gap of the insulating film of a trapezoidal barrier and applied it to derive the voltage-current characteristic of the barrier.