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Unipolar spin diodes and transistors
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TLDR
Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor.Abstract:
Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.read more
Citations
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Journal ArticleDOI
Spintronics: a spin-based electronics vision for the future.
Stuart A. Wolf,Stuart A. Wolf,David D. Awschalom,Robert A. Buhrman,J. M. Daughton,S. von Molnar,Michael L. Roukes,Almadena Chtchelkanova,Daryl Treger +8 more
TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Journal ArticleDOI
Spintronics: Fundamentals and applications
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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Challenges for semiconductor spintronics
TL;DR: In this article, the authors focus on advances towards the development of hybrid devices that can perform logic, communications and storage within the same materials technology, and take advantage of spin coherence to sidestep some limitations on information manipulation.
Journal ArticleDOI
Ferromagnetic semiconductors: moving beyond (Ga,Mn)As
TL;DR: The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, that is, electronics that exploit carrier spin polarization.
Journal ArticleDOI
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
TL;DR: In this paper, the Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias, and these carriers radiatively recombine, emitting circularly polarized light, providing a quantitative, model-independent measure of injection efficiency.
References
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Journal ArticleDOI
Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices.
Mario Norberto Baibich,J. M. Broto,Albert Fert,F. Nguyen Van Dau,Frédéric Petroff,P. Etienne,G. Creuzet,A. Friederich,Jean Chazelas +8 more
TL;DR: This work ascribes this giant magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy to spin-dependent transmission of the conduction electrons between Fe layers through Cr layers.
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Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
TL;DR: In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.
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Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.
TL;DR: b, R/R, is 11.8%, 20%, and 24%, respectively, consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films, in qualitative agreement with Slonczewski's model.
Journal ArticleDOI
Electrical spin injection in a ferromagnetic semiconductor heterostructure
TL;DR: In this paper, the authors reported the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide.