Valley Zeeman effect in elementary optical excitations of monolayer WSe2
TLDR
The valley pseudospin of transition metal dichalcogenides has an extra degree of freedom associated with the shape of the energy bands and can be manipulated using magnetic fields as mentioned in this paper.Abstract:
Charge carriers in transition metal dichalcogenides have an extra degree of freedom known as valley pseudospin, which is associated with the shape of the energy bands. Experiments show that this pseudospin can be manipulated using magnetic fields.read more
Citations
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Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
Kin Fai Mak,Jie Shan +1 more
TL;DR: In this paper, the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties are reviewed.
Journal ArticleDOI
Valleytronics in 2D materials
John Schaibley,Hongyi Yu,Genevieve Clark,Pasqual Rivera,Jason Ross,Kyle L. Seyler,Wang Yao,Xiaodong Xu +7 more
TL;DR: In this article, the latest advances in valley-tronics have largely been enabled by the isolation of 2D materials (such as graphene and semiconducting transition metal dichalcogenides) that host an easily accessible electronic valley degree of freedom, allowing for dynamic control.
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Signatures of moiré-trapped valley excitons in MoSe 2 /WSe 2 heterobilayers
Kyle L. Seyler,Pasqual Rivera,Hongyi Yu,Nathan P. Wilson,Essance Ray,David Mandrus,David Mandrus,Jiaqiang Yan,Jiaqiang Yan,Wang Yao,Xiaodong Xu +10 more
TL;DR: Results suggest that the origin of the observed effects is interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics, and presents opportunities to control two-dimensional moirÉ optics through variation of the twist angle.
Journal ArticleDOI
Single quantum emitters in monolayer semiconductors
Yu-Ming He,Genevieve Clark,John Schaibley,Yu He,Ming-Cheng Chen,Yu-Jia Wei,Xing Ding,Qiang Zhang,Wang Yao,Xiaodong Xu,Chao-Yang Lu,Jian-Wei Pan +11 more
TL;DR: A new class of SQEs based on excitons that are spatially localized by defects in 2D tungsten-diselenide (WSe2) monolayers is reported, which could give rise to practical advantages in quantum-information processing, such as an efficient photon extraction and a high integratability and scalability.
Journal ArticleDOI
k · p theory for two-dimensional transition metal dichalcogenide semiconductors
Andor Kormányos,Guido Burkard,Martin Gmitra,Jaroslav Fabian,Viktor Zólyomi,Neil Drummond,Vladimir I. Fal'ko +6 more
TL;DR: In this paper, the dispersion of the valence and conduction bands at their extrema (the K, Q, Γ, and M points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides (TMDCs) is described.
References
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Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
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Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.
TL;DR: It is shown that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls ofspin and valley in these 2D materials.