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Journal ArticleDOI

X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface

W. C. Marra, +2 more
- 01 Nov 1979 - 
- Vol. 50, Iss: 11, pp 6927-6933
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TLDR
In this paper, the details of the interface region of a molecular beam epitaxially grown Al single crystal on a single-crystal substrate were studied using X-ray diffraction and total external reflection.
Abstract
A new technique utilizing conventional x‐ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single‐crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.

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Citations
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Grazing-incidence in-plane X-ray diffraction on ultra-thin organic films using standard laboratory equipment

Abstract: A novel grazing-incidence in-plane X-ray diffraction setup based on a commercial four-circle diffractometer with a sealed-ceramic copper X-ray tube, upgraded with parabolic graded multilayer X-ray optics and a one-dimensional position-sensitive detector, is presented. The high potential of this setup is demonstrated by a phase analysis study of pentacene thin films and the determination of in-plane lattice constants of pentacene mono- and multilayers. The quality of the results compare well to studies performed at synchrotron radiation facilities.
Journal ArticleDOI

Oriented growth of ultrathin tungsten films on sapphire substrates

TL;DR: In this paper, thin layers of tungsten (30 and 300 A ) were grown by electron beam evaporation on (1102) sapphire substrates in a vacuum better than 10−8 Torr at a substrate temperature of 450 °C.
Journal ArticleDOI

Characterization of the structure of Langmuir-Blodgett films by short-wavelength radiations

M. Pomerantz
- 14 Sep 1987 - 
TL;DR: A review of the methods of determining the structure of organic thin films using short-wavelength radiations is given in this paper, which includes X-rays, electrons and neutrons.
Journal ArticleDOI

Residual stresses in titanium nitride thin films obtained with step variation of substrate bias voltage during deposition

TL;DR: In this article, a series of depositions of titanium nitride (TiN) films on M2 and D2 steel substrates were conducted in a Triode Magnetron Sputtering chamber.
References
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Book

The optical principles of the diffraction of x-rays.

TL;DR: In this paper, Bragg et al. describe the Optik der R6ntgenstrahlen in Raumgitter and leitet damit fiber zu den experimentellen Methoden and Ergebn]ssen, die den folgenden B~nden vorbehalten bleiben.
Book

Physics of Semiconductors

John L. Moll
Journal ArticleDOI

CXVII. The total reflexion of X-rays

TL;DR: In this article, the total reflexion of X-rays was studied and it was shown that X-ray can be interpreted as a measure of the amount of radiation absorbed by the human body.
Journal ArticleDOI

Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs

TL;DR: In this paper, the metal-semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs (001) with MBE at room temperature.