Journal ArticleDOI
X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface
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TLDR
In this paper, the details of the interface region of a molecular beam epitaxially grown Al single crystal on a single-crystal substrate were studied using X-ray diffraction and total external reflection.Abstract:
A new technique utilizing conventional x‐ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single‐crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.read more
Citations
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Epitaxial growth of MnAs on single-crystalline Mn–Zn ferrite substrates
T. Ikeda,Hiroshi Fujioka,Shinjiro Hayakawa,Kanta Ono,Masaharu Oshima,Mamoru Yoshimoto,H. Maruta,Hideomi Koinuma,Katsuhiko Inaba,Ryuji Matsuo +9 more
TL;DR: In this paper, the authors used molecular beam epitaxy (MBE) to grow epitaxial single-crystalline MnAs films with the growth plane of (0, 0,0,1) on the (1, 1, 1)Mn-Zn ferrite substrates.
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Analysis of Surface Layers and Thin Films by Low Incident Angle X-Ray Diffraction
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The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV-CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires.
TL;DR: The upgraded `In situ growth of Nanoscructures on Surfaces' (INS) endstation of the InterFace beamline IF-BM32 at the European Synchrotron Radiation Facility (ESRF) is presented, as well as the first in situ X-ray scattering measurements during the growth of silicon nanowires.
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A novel Z-axis diffractometer for X-ray diffraction and fluorescence studies
J.M. Bloch,P. Eisenberger +1 more
TL;DR: In this article, the authors describe an instrument that facilitates the performing of these types of measurements and allows for the investigation of the gas-liquid interface using a variety of synchrotron X-ray scattering techniques, including grazing incidence diffraction (GID), shallow angle reflection (SAR), near total external fluorescence (NTEF), and EXAFS experiments from the surface of liquids.
References
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Book
The optical principles of the diffraction of x-rays.
TL;DR: In this paper, Bragg et al. describe the Optik der R6ntgenstrahlen in Raumgitter and leitet damit fiber zu den experimentellen Methoden and Ergebn]ssen, die den folgenden B~nden vorbehalten bleiben.
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CXVII. The total reflexion of X-rays
TL;DR: In this article, the total reflexion of X-rays was studied and it was shown that X-ray can be interpreted as a measure of the amount of radiation absorbed by the human body.
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Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
A. Y. Cho,P. D. Dernier +1 more
TL;DR: In this paper, the metal-semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs (001) with MBE at room temperature.