Journal ArticleDOI
X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface
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TLDR
In this paper, the details of the interface region of a molecular beam epitaxially grown Al single crystal on a single-crystal substrate were studied using X-ray diffraction and total external reflection.Abstract:
A new technique utilizing conventional x‐ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single‐crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.read more
Citations
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Journal ArticleDOI
Influence of oxygen diffusion on residual stress for tantalum thin films
TL;DR: The influence of oxygen diffusion on the residual stress of 500A tantalum thin films sputtered on Si substrate after annealing temperature from 200to400°C is examined in this article.
Journal ArticleDOI
Influence of surface roughness on near‐surface depth analysis from X‐ray reflectivity measurements
TL;DR: In this paper, the effect of a decrease in the intensity of refracted X-rays due to diffuse scattering at a rough surface and interface is considered and the authors present a new analysis of the X-ray reflectivity from a multilayer surface taking into account roughness induced diffuse scattering.
Journal ArticleDOI
Texture development and residual stress in UHV evaporated silver films on glass substrates as a function of substrate temperature
TL;DR: In this article, the components of the stress tensor were obtained using measurements at three different φ angles of 0°, 45° and 90°, and showed, an increase with substrate temperature in agreement with the SZM predictions, and a decrease with ψ angle, possibly due to some correlation between the preferred orientation and grain size.
Journal ArticleDOI
The Growth of Ni Overlayers on Au(100) Buffers Deposited on GaAs(100) and MgO(100) Substrates.
TL;DR: Using RHEED, LEED and Auger spectroscopy the growth of Ni overlayers at room temperature was observed to follow an epitaxial layer-by-layer mode for two monolayers, after which islanding occured as discussed by the authors.
Patent
Nitride semiconductor substrate, production method therefor and nitride semiconductor device
Yuichi Oshima,Takehiro Yoshida +1 more
TL;DR: In this article, the X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface was used to obtain the FWHM of a nitride semiconductor substrate.
References
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Book
The optical principles of the diffraction of x-rays.
TL;DR: In this paper, Bragg et al. describe the Optik der R6ntgenstrahlen in Raumgitter and leitet damit fiber zu den experimentellen Methoden and Ergebn]ssen, die den folgenden B~nden vorbehalten bleiben.
Journal ArticleDOI
CXVII. The total reflexion of X-rays
TL;DR: In this article, the total reflexion of X-rays was studied and it was shown that X-ray can be interpreted as a measure of the amount of radiation absorbed by the human body.
Journal ArticleDOI
Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
A. Y. Cho,P. D. Dernier +1 more
TL;DR: In this paper, the metal-semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs (001) with MBE at room temperature.