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X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface
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TLDR
In this paper, the details of the interface region of a molecular beam epitaxially grown Al single crystal on a single-crystal substrate were studied using X-ray diffraction and total external reflection.Abstract:
A new technique utilizing conventional x‐ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single‐crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.read more
Citations
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Matrix analog of the takagi equations for grazing-incidenee diffraction
TL;DR: In this article, a new matrix method is introduced to investigate X-ray and Mossbauer diffraction under specular reflection conditions, which combines the propagation problem and the boundary conditions into one task and is well suited for studying the reflectiondiffraction problems in the case of multiple layer films and crystals with a continuous variation of the crystal parameters near to the surface.
Journal ArticleDOI
Differential-mode grazing-incidence diffraction from nanometre-layer heterostructures
TL;DR: In this paper, the differential mode of the grazing-incidence diffraction is employed for the characterization of a thin Ga1-xAlxAs/GaAs (001) heterostructure.
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Chapter 3 grain boundaries in ceramics and at ceramic-metal interfaces
D.R. Clarke,D. Wolf +1 more
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Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering
TL;DR: In this article, the reciprocal space mappings of symmetric reflection (0 0 0 2) and asymmetric reflection over bar 4 were measured with high resolution X-ray diffraction, which indicated that the microstructure and strain status of barrier correlate to that of the underlying i-GaN layer.
References
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Book
The optical principles of the diffraction of x-rays.
TL;DR: In this paper, Bragg et al. describe the Optik der R6ntgenstrahlen in Raumgitter and leitet damit fiber zu den experimentellen Methoden and Ergebn]ssen, die den folgenden B~nden vorbehalten bleiben.
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CXVII. The total reflexion of X-rays
TL;DR: In this article, the total reflexion of X-rays was studied and it was shown that X-ray can be interpreted as a measure of the amount of radiation absorbed by the human body.
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Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
A. Y. Cho,P. D. Dernier +1 more
TL;DR: In this paper, the metal-semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs (001) with MBE at room temperature.