Journal ArticleDOI
X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface
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In this paper, the details of the interface region of a molecular beam epitaxially grown Al single crystal on a single-crystal substrate were studied using X-ray diffraction and total external reflection.Abstract:
A new technique utilizing conventional x‐ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single‐crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.read more
Citations
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Journal ArticleDOI
Epitactic growth of a decagonal phase in an Al–Ni–Co alloy film deposited on a (0001) sapphire substrate
K. Saito,K. Ichioka,S. Sugawara +2 more
TL;DR: In this article, it was shown that the vacuum deposition of Al72Ni15Co13 alloy on the substrates heated above 400°C allows a homogeneous poly-quasicrystalline film, consisting of the Ni-rich basic decagonal phase to grow.
Journal ArticleDOI
Reflection electron microscopy of buried interfaces in the transmission geometry
TL;DR: In this paper, the authors considered a thin film in TEM containing a vertical interface in the plane of the beam, and the intensity of the specular beam reflected from the interface was considered under multiple scattering conditions.
Journal ArticleDOI
X-ray diffraction methods for the determination of stresses and strains in multilayer monocrystal films
TL;DR: In this article, basic equations relating to the anisotropic theory of elasticity for multilayer heterostructures are presented, which account for the plastic deformation and the layer lattice parameters.
Book ChapterDOI
Chapter 3 - Atomic Geometry and Electronic Structure of Tetrahedrally Coordinated Compound Semiconductor Interfaces
Journal ArticleDOI
Evaluation of Anisotropic Lattice Strain of Co9Fe/Cu Superlattice by Grazing Incidence X-ray Scattering Method
TL;DR: In this paper, the lattice strain in the Co 9 Fe/Cu superlattices has been evaluated in two different X-ray scattering experiments using GIXS geometry.
References
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Book
The optical principles of the diffraction of x-rays.
TL;DR: In this paper, Bragg et al. describe the Optik der R6ntgenstrahlen in Raumgitter and leitet damit fiber zu den experimentellen Methoden and Ergebn]ssen, die den folgenden B~nden vorbehalten bleiben.
Journal ArticleDOI
CXVII. The total reflexion of X-rays
TL;DR: In this article, the total reflexion of X-rays was studied and it was shown that X-ray can be interpreted as a measure of the amount of radiation absorbed by the human body.
Journal ArticleDOI
Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
A. Y. Cho,P. D. Dernier +1 more
TL;DR: In this paper, the metal-semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs (001) with MBE at room temperature.