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The model is tested for a wide range of transistor sizes (30), and shows excellent precision, never reported before for such a wide range of transistor sizes, including short-channel transistors.
The results suggest that the annealing temperatures are critical for determining the transistor performances.
The measurements reveal that the fabricated devices show the desired transistor characteristics.
This result represents one of the most effective transistor layout-level RHBD approaches demonstrated to date in SiGe.
Experimental results obtained for a silicon RF bipolar transistor demonstrate validity of the method.
These calculated results provide useful information to the design of CNT field-effect-transistor devices.
This is the best reported gain performance for any transistor.
This validates the extension of PET theory equations for low-power SMD LED.

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