Showing papers on "Antimonide published in 2001"
TL;DR: In this paper, it was shown that the interface between sodium potassium antimonide and cesium antimonides can result in lowering of the electron affinity to a level below the bottom of the conduction band of the Na2KSb, leading to the emission of almost all photogenerated electrons within the cathode.
Abstract: When radiation of sufficiently high energy is incident on the surface of a semiconductor photocathode, electrons are excited from the valence band to the conduction band and these may contribute to the photocurrent. The photocurrent in a single-layer cathode is found to be small, because of collisions within the cathode material, the electron affinity condition, etc. It is observed that when a thin layer of n-type cesium antimonide (Cs3Sb) is deposited over a p-type layer of sodium potassium antimonide (Na2KSb), there occurs a sharp rise in the photocurrent. The causes for the dramatic increase in the photocurrent obtainable from a sodium potassium antimonide cathode, by depositing a thin layer of cesium antimonide are analyzed in this article. It has been shown that the interface between sodium potassium antimonide and cesium antimonide can result in lowering of the electron affinity to a level below the bottom of the conduction band of sodium potassium antimonide. The drift field that arises at the heterointerface enables the electrons to reach the surface, leading to the emission of almost all the photogenerated electrons within the cathode. The processes involved in photoemission from such a double-layer cathode are examined from a theoretical point of view. The spectral response of the two-layer cathode is also found to be better than that of a single-layer cathode.
19 citations
TL;DR: In this paper, liquid phase epitaxy (LPE) regrowths are used to produce a virtual substrate of III-V antimonide ternary and quaternary alloys.
12 citations
TL;DR: In this paper, the growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C.
Abstract: Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)CoSb3 ∥ (001)InSb; [100]CoSb3 ∥ [110]InSb.
11 citations
TL;DR: In this paper, phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry.
Abstract: Phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry. High-resolution scanning tunneling microscopy confirms the interpretation of the phase shift. These results are consistent with a previous structural assignment of the AlSb β(4×3) and α(4×3) surface reconstructions and provide guidelines for producing smooth interfaces in antimonide-based heterostructures.
10 citations
TL;DR: The ternary phase with x = 1.32(5) crystallizes in the W5Si3 type (space group I4/mcm, Z = 8, for x = 0.6(2), c....
Abstract: Ti5SixSb3x can be prepared by melting mixtures of Ti, Si, and TiSb2. The ternary phase with x = 1.32(5) crystallizes in the W5Si3 type (space group I4/mcm, Z = 8, for x = 1.32(5): a = 1034.6(2), c...
8 citations
06 Jun 2001
TL;DR: In this paper, structural and optical properties of antimonide/arsenide interfaces are investigated on InAs/AlSb multiple quantum well samples with different types of Sb-like interfaces and various InAs thicknesses.
Abstract: We describe some key growth issues for Mid-Infrared electroluminescent devices based on a quantum-cascade design using InAs/AlSb heterostructures grown on GaSb substrates. Structural and optical properties of antimonide/arsenide interfaces are first investigated on InAs/AlSb multiple quantum well samples with different types of Sb-like interfaces and various InAs thicknesses. We show that X-ray reflectometry is a powerful complementary tool to High Resolution X-ray Diffraction (HRXRD) to extract both individual layer thicknesses and interface roughnesses using only electronic densities as input parameters. The good structural quality of samples is evidenced by the persistence of sharp high order satellite peaks on HRXRD spectra. The associated optical properties are studied by photo-induced intersubband absorption. Strong E 12 p- polarized intersubband absorptions are observed with a full- width-at-half-maximum (FWHM) around 12 meV at 77 K showing good material quality. Absorption peak positions are compared to theoretical simulations based on a 2 X 9-band k.p calculation. These results allow us to properly design and fabricate InAs/AlSb quantum cascade light emitting devices in the 3 - 5 micrometers wavelength window taking into account the growth constraints. Well-resolved Mid-Infrared (3.7 - 5.3 micrometers ) electroluminescence peaks are observed up to 300 K with FWHM to emission energy ratio ((Delta) E/E) around 8%.
7 citations
TL;DR: In the centrosymmetric hexagonal space group P63/mmc, LiBaSb as mentioned in this paper is a compound of barium antimony, which contains alternate hexagonal layers of (LiSb) and Ba.
Abstract: Lithium barium antimony, LiBaSb, crystallizes in the centrosymmetric hexagonal space group P63/mmc. Ba atoms sit on positions with \overline 3m symmetry, while the Sb and Li atoms occupy sites of \overline 62m symmetry. The structure of LiBaSb contains alternate hexagonal layers of (LiSb) and Ba. In this compound, antimony is present as isolated Sb3− species. The Ba atom lies inside a hexagonal prism (6 × Li and 6 × Sb).
7 citations
TL;DR: In this article, the authors discuss the new achievements in the field of infrared devices based on antimony compounds and highlight the recent advance of III-V antimonide structures, which have stronger chemical bonds and are more attractive than II-VI compounds provided that the same range of bandgaps can be covered.
Abstract: Publisher Summary This chapter discusses the new achievements in the field of infrared devices based on antimony compounds. On comparison with other materials systems highlights the recent advance of III–V antimonide structures. The advances have been dramatic in the case of infrared lasers, where improved performance is linked with the suppression of nonradiative Auger recombination by band structure engineering associated with the introduction of thin InAs layers into the devices and associated type II band alignments at the interfaces. The energy band structure can be adjusted by strain and the transition energy can be controlled by varying the thickness of the layer, which may result in better uniformity over a larger area. The III–V materials have stronger chemical bonds and are, therefore, more attractive than II–VI compounds provided that the same range of bandgaps can be covered. The introduction of epitaxial growth methods has widened the range of material combinations available.
6 citations
TL;DR: In this paper, the authors report on molecular beam epitaxial growth and structural characterisations of unintentionally-doped InAs/AlSb strained multiple quantum wells grown on GaSb substrates.
6 citations
TL;DR: The phase pure III-V binary antimonide (InSb) was first prepared through a novel solution route at a temperature of 200°C as discussed by the authors, at a solution temperature of 2InCl3 + 6KCl + 6BH3 + 3H2 Mean crystallite dimensions
Abstract: The phase-pure III-V binary antimonide (InSb) was first prepared through a novel solution route at a temperature of 200°C: 2InCl3 + 6KBH4 + 2Sb2InSb + 6KCl + 6BH3 + 3H2 Mean crystallite dimensions
5 citations
TL;DR: In this article, the optical and electrical confinement of a GaSb-based quantum well structure have been improved by inserting an aluminium oxide layer obtained by wet oxidation of AlAs in the upper confinement layer.
Abstract: Low-threshold laser emission at room temperature of a GaSb-based quantum well structure is reported in this paper. The optical and electrical confinement of the structure have been improved by inserting an aluminium oxide layer obtained by wet oxidation of AlAs in the upper confinement layer. The strains between the oxide layer and the contiguous layers (GaAs and GaSb) are compensated by an AlAs/GaAs superlattice. The resulting morphology of the oxidized AlAs layers is presented.
TL;DR: The antimonide oxide Ba(3)Sb(2)O consists of discrete [Sb (2)](4-) and O(2-) anions, and crystallizes with a new structure type, and is observed in some other Ba-rich metallide oxides.
Abstract: The antimonide oxide Ba3Sb2O consists of discrete [Sb2]4− and O2− anions, and crystallizes with a new structure type The Sb—Sb distances are comparable to those known from electron-precise zintl phases and the tetrahedral coordination of the O2− anion is also observed in some other Ba-rich metallide oxides
TL;DR: In this paper, the authors discuss some of the key MBE growth issues for type-II Sb-based lasers and present a summary of recent progress towards the realization of high-power, high-beam-quality, mid-infrared (IR) lasers based on the W configuration of the active region.
TL;DR: InAs/InAs x Sb 1− x single quantum well (SQW) structures have been grown on p + -InAs(0, 0, 1) substrates by molecular-beam epitaxy as mentioned in this paper.
TL;DR: An orthorhombic phase of Mn2Sb (a=0.562 nm, b= 0.432 nm, c=0,757 nm) was obtained for the first time in the manganese antimonide samples treated at a pressure of P=7 GPa and a temperature of T=1800 K.
Abstract: An orthorhombic phase of Mn2Sb (a=0.562 nm; b=0.432 nm; c=0.757 nm) was obtained for the first time in the manganese antimonide samples treated at a pressure of P=7 GPa and a temperature of T=1800 K. The high-pressure phase is metastable under normal conditions and breaks on heating above 420 K. A characteristic feature of this phase is the absence of a total magnetic moment at T>90 K.
12 Nov 2001
TL;DR: In this article, optically-pumped mid-infrared (3.4 - 4.5 /spl mu/m) lasers based on InAs/InGaSb/InAs type-II quantum wells that are periodically inserted into the InGaAsSb waveguide are presented.
Abstract: We report on optically-pumped mid-infrared (3.4 - 4.5 /spl mu/m) lasers based on InAs/InGaSb/InAs type-II quantum wells that are periodically inserted into the InGaAsSb waveguide designed to absorb the 1.85 /spl mu/m pump radiation. The integrated absorber layers allow the decoupling of pump absorption from the type-II quantum wells, and efficiently supply carries into these wells by ambipolar diffusion. These type-II integrated absorber lasers exhibit high quantum efficiency and high characteristic temperature associated with lasing threshold.
TL;DR: The structure of lanthanum rhodium antimonide, La 0.1 Rh 8 Sb 24, has been determined from single-crystal X-ray data as discussed by the authors.
Abstract: The structure of lanthanum rhodium antimonide, La 0.1 Rh 8 Sb 24 , has been determined from single-crystal X-ray data. It crystallizes in the cubic space group Im3 (No.204), with a =9.2213(15) A, V =784.1(2) A 3 and the LaFe 4 P 12 structure type.
05 Dec 2001
TL;DR: In this article, the authors discuss recent advances in the performance of mid-IR antimonide type-II quantum well laser and show that the four-constituent "W" structure has the ability to suppress Auger non-radiative recombination and limit the internal optical loss.
Abstract: High-power, high-brightness mid-infrared (mid-IR, 3-5 /spl mu/m) lasers operating at ambient or thermoelectric cooler temperatures are needed for such applications as longrange chemical sensing to monitor pollutants, industrial process control, medical diagnostics, and IR countermeasures. A particularly promising approach is based on the four-constituent "W" type-II antimonide quantum-well laser. W structures have demonstrated the ability to strongly suppress Auger non-radiative recombination and also to limit the internal optical loss. We discuss recent advances in the performance of mid-IR antimonide type-II quantum well lasers.
TL;DR: In this paper, the results of a photoemission spectroscopy study of K 3 Sb films of 100 A with and without an extra layer of 0.1 ml Cs were presented.